Resonances and absorption enhancement in thin film silicon solar cells with periodic interface texture

We study absorption enhancement by light scattering at periodically textured interfaces in thin film silicon solar cells. We show that the periodicity establishes resonant coupling to propagating waveguide modes. Ideally, such modes propagate in the high index silicon film where they are eventually absorbed, but waveguide modes exist also in the transparent front contact layer if the product of its refractive index and thickness exceeds half the wavelength. Taking into account that the absorption coefficient of realistic transparent conducing films exceeds the one of silicon close to its band gap, certain waveguide modes will enhance parasitic absorption in the transparent front contact. From an analysis based on the statistic distribution of energy among the available waveguide and radiation modes, we conclude that conventional thin film silicon solar cells with thick and nonideal contacts may fail to reach the previously noted bulk limit of 4n(Si)(2); instead, a more conservative limit of 4(n(Si)(2) - n(TCO)(2)) applies. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3569689]

Design, Fabrication and Characterization of Mid-Infrared Strip Waveguide for Laser Spectroscopy in Liquid Environments

Yu-Chi Chang

Optical sensors based on the interaction between molecular vibrations and mid infrared radiations attracted high attentions in the last decades. In this study, we present the development of a waveguide evanescent field sensor based on the absorption spectroscopy in liquid environments. The device consists of a single mode strip waveguide integrated with a microfluidic system. With a quantum cascade laser at the wavelength of 5.8 μm, we demonstrate the detection of cocaine dissolved in tetrachloroethylene (PCE). Mid infrared germanium waveguides on silicon have been proposed but not experimentally demonstrated. Here we realize this new type of waveguide with a monocrystalline germanium layer on a silicon substrate (Ge-on-Si) with standard photolithography and reactive ion etching. It is designed to be singlemode in transverse magnetic polarization at 5.8 μm. We used a method based on the Fabry-Perot resonance to measure the propagation loss, and the achieved lowest loss is 2.4 dB/cm. The bending loss was measured to be 0.12 dB per 90∘bend with the radius of 115 μm. A microfluidic chip made from a UV-curable adhesive is integrated to the Ge-on- Si waveguide. This is the first integration of this waveguide with a microfluidic system. Solutions of cocaine in PCE flow in the microfluidic channel and absorb the light in the evanescent field. A reference waveguide and an integrated Y- junction eliminate the noise from coupling fluctuations, and the limit of detection is calculated to be 5 μg/ml. Mid infrared photonics can be further developed based on the platform of Ge-on- Si waveguides. We demonstrate a detection of refractive index changes with a Mach-Zehnder interferometer integrated with a microfluidic system. Subwavelength structures for antireflection of the waveguide facets are also experimentally tested. We foresee an increasing development and applications based on this waveguide in the mid infrared.

EPFL2012

Absorption enhancement in thin-film silicon solar cells

Ali Naqavi

Thin-film silicon technology is a major candidate to comply with the ever-increasing global energy demand. The small thickness of silicon allows high industrial throughput and low material usage and subsequently opens new avenues to mass-production of low-cost solar cells. This small thickness, together with the indirect bandgap of silicon and thus its relatively weak absorption of long-wavelength light, requires methods to improve absorption. This is often called light trapping. Light absorption can be enhanced in a thin film solar cell by introducing light scattering functionalities, for example textured interfaces. Of common interest is to know: 1) how far the photocurrent and efficiency of a cell can be improved by applying these geometrical changes, 2) which geometries can satisfy the criterion of high photocurrent generation, and 3) how much the incident angle affects the two previous points. This thesis addresses the mentioned questions. Specifically, amorphous silicon (a-Si) cells are the main subject of focus in the thesis, however, the results and conclusions are applicable to other types of solar cells, and similar structures such as light-emitting diodes. The first part of the thesis is devoted to the electromagnetic theory for thin film multilayers and the numerical methods which were used for optical simulations during the PhD work. These methods are described and compared, and some common sources of numerical error in them are identified. To address the first and the third questions, the limits of light absorption enhancement, photocurrent generation and efficiency in thin-film solar cells are studied. As a result, we obtain the limits of absorption enhancement in thin films with periodic texture, over a wide angular and wavelength range. More specifically, first we extend the statistical temporal coupled-mode theory to the case of thin films with wavelength-scale grating couplers. Then, we use this theory to study the effect of the incident angle and the grating period on the absorption enhancement in an idealized thin film with a thickness of 200 nm and refractive index n=4. We show that absorption in a thin-film solar cell depends strongly on the grating period and angle of incidence; therefore, consideration of oblique incident of light in these cells is a necessity. We provide guidelines for the design of thin-film solar cells with periodic texture. Afterwards, we obtain the limit of absorption enhancement for different structures including a full thin-film a-Si solar cell stack for different grating geometries. We show that for thin-films, hexagonal gratings enhance absorption more significantly compared to square gratings. We identify parasitic absorption as a major bottleneck for photocurrent generation. To deal with realistic cases, we investigate the guided modes of thin-film a-Si solar cells by rigorous simulations (the second and the third question). First, we extract the guided modes of the cells and study them in an equivalent planar model. We show that a plasmonic mode exists for very thin buffer layers. Then, we focus on the effect of texture geometry over a broad angular range by comparing the short-circuit current density (Jsc) of the cells for different grating patterns. We find that based on the cell configuration, the optimal texture may be symmetric or asymmetric. We show that TM polarized light produces higher photocurrent at large incident angles regardless of the texture geometry. In the final part of the thesis, we study two novel configurations for thin-film solar cells. First a plasmonic a-Si cell is considered which does not include a buffer layer. We demonstrate that the Jsc of the plasmonic cell is sensitive to the thickness of the n-doped silicon layer and we find that for an n-Si thickness of less than 10 nm, the plasmonic cell outperforms a conventional a-Si cell. Then we simulate an a-Si cell with a periodic array of ZnO nanowires inside the active layer. Our simulations indicate that assuming a periodicity of around 500 nm, the Jsc is highest for a nanowire diameter of about 300 nm.

EPFL2013

High vacuum chemical vapor deposition (HV-CVD) of alumina thin films

Xavier Multone

We analyzed along this work the feasibility to produce high quality alumina thin films by High Vacuum Chemical Vapor Deposition (HV-CVD). We study the influence of various parameters on the growth process and on the film quality, such as substrate temperature, gas flow or pressure. We aim to highlight the advantages and the limitations of the HV-CVD technique. A high vacuum CVD reactor has been designed, built and optimized. A novel effusing source has been designed to guarantee a molecules distribution uniformity of 95% on the substrate surface. The main technical challenges faced were to reach the maximum substrate temperature in vacuum, to control the precursor flux and to control the temperature of the gas lines to avoid condensation. For the first time, films of Al2O3 are obtained by HV-CVD from aluminum isopropoxide as precursor in a novel HV-CVD reactor. The HV-CVD approach stands out of all the other CVD methods as it allows excellent prediction of growth rates and film thickness homogeneities if the decomposition probability of the precursor is once determined. In this work, the latter was determined to increase with increasing substrate temperature to 0.2, further increase of temperature reduces the decomposition probability due to increased desorption rate. Pure alumina films are obtained in a reliable and reproducible way. The presence of oxidizing agents, as decomposition partners, reduces the activation energy of deposition process from 33.1 ± 8.2 kJ/mol to 11.4 ± 5.3 kJ/mol in presence of sufficient oxidizing agent. The Al2O3 films are growing at deposition rate from 1 to 50 nm/min. It has been found that, the lower the deposition temperature, the higher the density of the deposited films therefore the higher refractive index. The index of refraction varies from 1.65 ± 0.01 to 1.35 ± 0.01 at 632 nm wavelength from lowest to highest deposition temperature. At low deposition temperature, Al2O3 can contain residual OH-groups and Al=O entities. This content is independent of the total flow rates of the precursor in the range of 5·1015 molecules/cm2·s to 3·1016 molecules/cm2·s impinging on the substrate. Substrate effects have not been observed in the limited range of tests on natural oxidized silicon, 3 µm SiO2 on silicon, quartz, stainless steel, fused silica and 100 nm silicon nitride on top of silicon. The chemical composition of the deposited alumina films measured by EDX and XPS is nearly stoichiometric with 35 ± 5 at% Al and 65 ± 5 at% O, without carbon contamination. Remaining hydrogen in the films has not been studied in detail, but the difference of OH- absorption peaks by FTIR indicates that, a low temperature deposition, hydrogen incorporation is possible. Concerning the optical properties of the HV-CVD deposited films, absorption is very low from 250 nm to 1800 nm wavelength, but due to the porosity and granular structure of the films, light scattering can take place. But propagation loss smaller than 2 dB/cm were measured in channel waveguides fabricated from the HV-CVD alumina films. Planar and channel waveguides demonstrate good guiding properties at 670 nm and 1.55 µm, as well. This work also opens new possibilities to deposit in situ local structures of or in transparent alumina on large surface. Light induced high vacuum chemical vapor deposition of alumina microstructures by 248 nm excimer laser is presented and shows an activation energy of 5.2 ± 0.4 kJ/mol, much smaller than for thermal deposition. The influence of the fluence and the repetition rate is discussed. Electron beam assisted HV-CVD of alumina is demonstrated and proves the feasibility of in situ structuration under HV-CVD conditions.

EPFL2009