Characterization and physical modeling of endurance in embedded non-volatile memory technology
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Memory devices have returned to the spotlight due to increasing interest in using in-memory computing architectures to make data-driven algorithms more energy-efficient. One of the main advantages of this architecture is the efficient performance of vector ...
Machine learning and data processing algorithms have been thriving in finding ways of processing and classifying information by exploiting the hidden trends of large datasets. Although these emerging computational methods have become successful in today's ...
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In Switzerland the National Science Foundation recently funded a network on Nano-Skyrmionics [https://skyrmions.epfl.ch] joining scientists from various institutions. Here, we provide a status report on selected forefront aspects of the research field. Thi ...
2020
The revolution of information-technology owes to silicon-based complementary-metal-oxide (CMOS) technology. However, CMOS technology approaches its physical limitation hardening the further progress of memory devices as well as computing paradigm requiring ...
EPFL2019
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While Resistive Random Access Memories (RRAM) are perceived nowadays as a promising solution for the future of computing, these technologies suffer from intrinsic variability regarding programming voltage, switching speed and achieved resistance values. Wr ...
IEEE2020
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A persistent transactional memory (PTM) library provides an easy-to-use interface to programmers for using byte-addressable non-volatile memory (NVM). Previously proposed PTMs have, so far, been blocking. We present OneFile, the first wait-free PTM with in ...
IEEE COMPUTER SOC2019
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Two-dimensional materials (2DMs) have found potential applications in many areas of electronics, such as sensing, memory systems, optoelectronics, and power. Despite an intense experimental work, the literature is lacking of accurate modeling of nonvolatil ...
We have witnessed a wide range of theoretical as well as experimental investigations to envisage external stimuli induced changes in electronic, optical and magnetic properties in the metal organiccomplexes, while hybrid perovskites have recently joined th ...
ELSEVIER SCI LTD2022
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Here we use triple-cation metal-organic halide perovskite single crystals for the transistor channel of a flash memory device. Moreover, we design and demonstrate a 10 nm thick single-layer nanofloating gate. It consists of a ternary blend of two organic s ...
2020
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Non-Volatile Memory offers the possibility of implementing high-performance, durable data structures. However, achieving performance comparable to well-designed data structures in non-persistent (transient) memory is difficult, primarily because of the cos ...