Publication
A multiphonon-assisted model included in a Poisson-Schroedinger solver has been applied for the calculation of the capture/emission trapping rates of Si/SiO2 interface defects and their dependence with respect to the trap energy and depth in the oxide. The accurate trap cross-sections extracted with this approach permit compact modeling engineers to evaluate the accuracy of constant cross-section models. The model has been applied to extract the trap concentration and frequency response, comparing AC simulations with measurements. © 2011 IEEE.
François Maréchal, Daniel Alexander Florez Orrego, Meire Ellen Gorete Ribeiro Domingos, Réginald Germanier
Alireza Karimi, Philippe Louis Schuchert
Stefano Coda, Laurent Villard, Stephan Brunner, Justin Richard Ball, Oleg Krutkin, Luke Simons, Umesh Kumar, Baruch Rofman, Jesús Poley Sanjuán, Javier García Hernández, Matteo Vallar, Aylwin Iantchenko, Samuele Mazzi