Optics, morphology, and growth kinetics of GaAs/Al_{x}Ga_{1-x}As quantum wells grown on vicinal substrates by metalorganic vapor phase epitaxy
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We report on the growth by metalorganic vapor phase epitaxy of high-quality Al1-xInxN layers and AlInN/GaN Bragg mirrors near lattice matched to GaN. Layers are grown on a GaN buffer layer with no cracks over full 2 in. sapphire wafers. The index contrast ...
Quantitative analysis of high resolution electron microscopy image has been carried out to measure the indium distribution inside InGaN/GaN quantum well. The analyzed samples were nominally grown with 15% indium composition by molecular beam epitaxy with i ...
The authors investigate a 1 × N free-space microoptical fiber switch for a large number of interconnects. The system to be studied is a reflective 4 f optical system. Alignment tolerances and coupling efficiency are investigated and the benefit brought by ...
High-efficiency top-emitting InGaAs/AlGaAs microcavity light-emitting diodes (MCLEDs) have been optimized and fabricated. The structures were grown using molecular beam epitaxy on GaAs substrates. They consist of a three-period Be-doped distributed Bragg r ...
Microcavity light emitting diodes (MCLEDs) present several interesting features compared to conventional LEDs such as narrow linewidth, improved directionality and high efficiency. We report here on MCLEDs with a top emitting geometry. The MCLED layers wer ...
Ammonia has been used to grow GaN layers by molecular beam epitaxy on c-plane sapphire substrates. The ratio of nitrogen to Ga active species, i.e., the actual V/III ratio, has been varied from 1 to 4. It is found that increasing the V/III ratio improves t ...
Strain-compensated InAlAs/lnGaAs HEMT structures, grown on InP substrate, have been investigated in terms of structural and electrical properties. From detailed x-ray diffraction (XRD) investigations the compensation index and the evolution of the strain s ...
The lack of appropriate substrates has delayed the realisation of devices based on III-nitrides. Currently, the heteroepitaxial growth of GaN by metal organic vapour phase epitaxy (MOVPE) produces GaN layers which, despite huge densities of dislocations, a ...
We present a comparison between the predictions of two theoretical models and experimental results on ultrathin GaAs layers with a thickness in the range from 1 to 8 ML embedded in bulk (AlxGa1-x)As, 0.30 less than or equal to x less than or equal to 0.34. ...
The kinetics of GaN growth by MBE using ammonia as the reactive nitrogen source is studied both under Ga-rich and N-rich conditions. It is shown that adsorption site blocking by Ga and N atoms as well as by surface NH, complexes is a crucial factor to cont ...