Jean-François Carlin, Eric Feltin, Marcel Py, Marcus Gonschorek, Daniel Grandjean
The performance of novel AlInN/GaN HEMTs for high power / high temperature applications is discussed. With 0.25 mu m gate length the highest maximum output current density of more than 2 A/mm at room temperature and more than 3 A/mm at 77 K have been obtai ...
IEEE2006