We report a modification by thin silicon nitride intralayers of the Au/n-GaAs)(100) Schottky barrier height. Thin intralayers were obtained by nitridation of evaporated Si films on decapped GaAs substrates in an argon-nitrogen mixture plasma. The nitridation was performed at a beam energy
Elison de Nazareth Matioli, Luca Nela, Catherine Erine
Thi Ha My Pham, Youngdon Ko, Liping Zhong