Au/GaAs(100) interface Schottky barrier modification by a silicon nitride intralayer

Giorgio Margaritondo
1997
Article

Résumé

We report a modification by thin silicon nitride intralayers of the Au/n-GaAs)(100) Schottky barrier height. Thin intralayers were obtained by nitridation of evaporated Si films on decapped GaAs substrates in an argon-nitrogen mixture plasma. The nitridation was performed at a beam energy

Source officielle

https://infoscience.epfl.ch/record/90276?ln=fr

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Au/GaAs(100) interface Schottky barrier modification by a silicon nitride intralayer

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