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Monolithic integration of Si nanowires with metallic electrodes: NEMS resonator and switch applications

Publications associées (40)

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Large-scale, in-situ integration of horizontal carbon nanotube arrays into gas sensing devices

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Hoël Maxime Guérin

The successful experimental demonstration of large-scale and in-situ growth of horizontal, dense and aligned carbon nanotube (CNT) arrays is presented. This new CNT growth process is developed for the direct integration of nanotubes into gas sensing device ...

2013

On-chip Mass Sensing at the Physical Limits of Nanoelectromechanical Systems

Maher Kayal, Marc Pastre, Christian Kauth

A tunable and self-regulating on-chip carbon nanotube based mass balance is presented for small-size and low-cost environmental and healthcare applications. Tube stretching and a phase-locked loop topology make the system widely universal and invariant to ...

Ieee2013

Multi-gate Si nanowire MOSFETs

Mohammad Najmzadeh

Multi-gate devices e.g. gate-all-around (GAA) Si nanowires and FinFETs are promising can- didates for aggressive CMOS downscaling. Optimum subthreshold slope, immunity against short channel effect and optimized power consumption are the major benefits of s ...

EPFL2012

Wafer-level integrated electrospray emitters for a pumpless microthruster system operating in high efficiency ion-mode

Herbert Shea, Caglar Ataman, Simon Dandavino

Microfabrication, wafer-level integration, and characterization of internally fed arrays of electrospray thrusters for spacecraft propulsion are discussed. 5 μm inner diameter, 100 μm long capillaries and 150-to-300 μm diameter annular extractor electrodes ...

Ieee2012

In-situ grown horizontal carbon nanotube membrane

Mihai Adrian Ionescu, Dimitrios Tsamados, Hoël Maxime Guérin

We present the successful fabrication of horizontally grown and dense carbon nanotube (CNT) membranes in situ. A TiN/Al2O3/TiN stack is first patterned to be employed as a support for the CNT growth. Iron is then evaporated with a 45 degrees tilt angle on ...

Elsevier2012

In-IC Strategies for 3D Devices in Bulk Silicon

Matthieu Bopp

The increase of components density in advanced microelectronics is practically dictated by the device size and the achievable pitch between the devices. Scaling down dimensions of devices and progress in the circuit design allowed following Moore's law dur ...

EPFL2011

Nanoengineered Silicon: Technology and Applications

Sandro Carrara, Lucia Baldi Unser

Silicon has been, and continues to be, the material support of integrated circuit (IC) technology-the enabling tool of one of the most impressive technological, industrial and social revolution of mankind. Silicon (both in monocrystalline and polycrystalli ...

2011

Graphene-based Field-effect Transistors

Adarsh Singh Sagar

With transistors set to reach their smallest possible size in the next decade, the silicon chip is likely to change dramatically, or be replaced entirely. The transistor industry's path which has been largely shaped by Gordon Moore's famous prediction that ...

EPFL2011

Process Variation and Leakage Power

Bahman Kheradmand Boroujeni

Technology scaling improves the energy, performance, and area of the digital circuits. With further scaling into sub-45nm regime, we are moving toward very low supply (VDD) and threshold voltages (VT), smaller VDD/VT ratio, high leakage current, and large ...

EPFL2011

New approach for SOI pixel sensor

Louis Harik

Silicon on Insulator (SOI) is an interesting alternative to bulk silicon for the fabrication of integrated circuits due to its advantages with respect to the junction leakage, low switching noise coupling, high temperature immunity, low voltage and low pow ...

EPFL2009