Êtes-vous un étudiant de l'EPFL à la recherche d'un projet de semestre?
Travaillez avec nous sur des projets en science des données et en visualisation, et déployez votre projet sous forme d'application sur GraphSearch.
We demonstrate the effect of rapid thermal annealing on heavily Si-doped AlN/GaN quantum wells. After 1000 degrees C annealing during 5, 10, and 20 min, the dominant effect was interdiffusion of Si rather than intermixing between the Al and Ga atoms. Both their original value and the magnitude of the changes after annealing reveal that intersubband absorption and photovoltage are related to two different optical transitions as follows: absorption occurs in the 1 to 2 intersubband transition, whereas photovoltage is due to a subsequent process from the 1 to 2 and the manifold of 2 to higher order transitions. (C) 2011 American Institute of Physics. [doi:10.1063/1.3599846]
Chargement
Chargement
Aucun résultat