Publication
Diamond overgrown InAlN/GaN HEMT
Publications associées (34)
Diamond on GaN integration for power semiconductor devices with efficient thermal management
The international actions against global warming demands reductions in carbon emission and more efficient use of energy. Energy efficiency in the conversion and use of electricity, as an important form of energy in the modern life, has strong environmental ...
EPFL2021Seed Dibbling Method for the Grow of High-Quality Diamond on GaN
Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Alessandro Floriduz, Riyaz Mohammed Abdul Khadar, Mehdi Naamoun
The integration of diamond and GaN has been highly pursued for thermal management purposes as well as combining their exceptional complementary properties for power electronics applications and novel semiconductor heterostructures. However, the growth of d ...
AMER CHEMICAL SOC2021Novel pulsating heat pipe for high density power data centres: performance and flow regime analysis
John Richard Thome, Jackson Braz Marcinichen, Raffaele Luca Amalfi, Filippo Cataldo
With the advancement of technologies such as Artificial Intelligence and 5G telecommunications, where computational rate is constantly pushing its limits, highly efficient and reliable cooling devices are starting to become an overly critical factor. Not o ...
IEEE2021H-terminated polycrystalline diamond p-channel transistors on GaN-on-Silicon
Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Riyaz Mohammed Abdul Khadar, Mehdi Naamoun
In many semiconductor technologies, including GaN, the lack of p-channel devices is a major obstacle for complementary operations. Here, we demonstrate high-performance polycrystalline diamond p-channel transistors on GaN-on-Si. Following the optimization ...
2019Synthesis of nanocrystalline ZnO by the thermal decomposition of [Zn(H2O)(O2C5H7)(2)] in isoamyl alcohol
It was studied how the conditions of heat treatment of a [Zn(H2O)(O2C5H7)(2)] solution in isoamyl alcohol at 120-140A degrees C for 2-60 min affect the precursor decomposition mechanism and the characteristics of the obtained nanocrystalline zinc oxide. In ...
Maik Nauka/Interperiodica/Springer2017Tribocorrosion and electrochemical behaviour of nanocrystalline diamond coated Ti based alloys for orthopaedic application
Metallic implants such as hip and knee often fail due to the combined action of wear and corrosion. Nanocrystalline diamond (NCD) coatings on metallic implants can be a potential candidate to overcome this issue. In this work, we investigated the tribocorr ...
Elsevier2017Thermal Response of Multi-Microchannel Evaporators During Flow Boiling of Refrigerants Under Transient Heat Loads With Flow Visualization
John Richard Thome, Navid Borhani, Houxue Huang
Multi-microchannel evaporators with flow boiling, used for cooling high heat flux devices, usually experience transient heat loads in practical applications. These transient processes may cause failure of devices due to a thermal excursion or poor local co ...
Asme2016Surface Kinetics of Titanium Isopropoxide in Chemical Vapor Deposition of Titanium Dioxide and Barium Titanate
All chemical vapor deposition (CVD) processes rely on the adsorption and decomposition of precursors on a substrate to deposit the desired material. The growth rate of the film is determined by the surface kinetics of the utilized precursor molecules and g ...
EPFL2016Temperature dependence of the thermal boundary conductance in Ag–3Si/diamond composites
The effect of oxygen termination of diamond surfaces on the interface thermal conductance between Ag–3Si and diamonds is investigated in dependence of temperature by measuring thermal conductivity in the temperature range from 4 K up to ambient. Composites ...
Elsevier2015Influence of a Nanometric Al2O3 Interlayer on the Thermal Conductance of an Al/(Si, Diamond) Interface
Christian Monachon, Ludger Weber
The effect of an Al2O3 interlayer on the thermal conductance of metal (Al)/non-metal (diamond and silicon) interfaces is investigated using Time Domain ThermoReflectance (TDTR). Interlayers between 1.7 and 20nm are deposited on oxygen-terminated diamond an ...
Wiley-Blackwell2015