Role of stable and metastable Mg-H complexes in p-type GaN for cw blue laser diodes
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Self-assembled quantum-dots (QDs) represent a distributed ensemble of zero dimensional structures with a near-singular density of states. Implemented as the active medium in a diode laser their unique properties lead to improved and often novel characteris ...
This thesis addresses general aspects of the operation of a coupled-cavity vertical surface-emitting laser (CC-VCSEL) which consists of two active cavities optically coupled and independently electrically pumped. The first two chapters of the thesis deal w ...
Because of the strong electron-phonon coupling of the emitting 3d orbital in transition-metal (TM) ions, 3d systems exhibit luminescence with typically several hundred nm of spectral bandwidth. TM-ion-doped materials are, therefore, of high interest for ap ...
Rare-earth-ion doped KY(WO4)2 (hereafter KYW:RE) is a promising material for novel solid-state lasers. Its low laser threshold, high laser efficiency, and third-order nonlinear effects have stimulated research towards miniaturized thin-film waveguide laser ...
Fiber lasers are compact lightsources with high intrinsic beam quality and high efficiency. The lasing spectrum ranges from the blue to the near infrared and is achievable using fibers with different dopants and glass compositions. All-fiber lasers are cha ...
We report on studies of extended defects in electron-beam-pumped Zn1-xCdxSe/ZnSe blue and blue-green laser structures. To establish a direct correlation between the local luminescence properties and the presence of structural defects, the same thin foil sa ...
Characteristics of one-cascade (1.06 double right arrow 1.24 mum) and two-cascade (1.06 double right arrow 1.24 double right arrow 1.48 mum) phosphorus-doped fiber Raman lasers are studied. The cavities of both lasers are formed by Bragg gratings written d ...
We demonstrate edge-emitting lasers based on self-assembled InAs quantum dots (QDs) on GaAs substrates. The InAs QDs are embedded in an InGaAs quantum well (QW) to red-shift the lasing transition. The lasers emit at lambda=1.2 mum with threshold current de ...
We have studied the capabilities of chemical beam epitaxy (CBE) to produce high-gain media for long-wavelength (1.5 mu m) vertical cavity surface emitting lasers (VCSELs). Using a parameter pair of low growth temperature and small V/III ratio the integrati ...
We present a detailed theoretical study of a vertical-cavity surface-emitting laser (VCSEL) with two optically coupled, active cavities. The study is based on a rate-equation model written for carriers and photons under steady-state conditions. The model a ...