Strain compensation in AlInN/GaN multilayers on GaN substrates: Application to the realization of defect-free Bragg reflectors
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Resonant-cavity InGaN/GaN quantum well light emitting diodes have been fabricated. Nitride layers were grown by molecular beam epitaxy on Si (111). We fabricated the structures using a combination of Si substrate etching, GaN etching and dielectric (Ta2O5/ ...
Gallium Nitride (GaN) and its ternary alloys with aluminium and indium have met a growing interest in the last decade. These semiconductors have a large direct bandgap and can be doped with either silicon (Si) for n-type and magnesium (Mg) for p-type layer ...
We propose to use lattice-matched AlInN/GaN to replace the Al(Ga)N/GaN material system for III-nitride Bragg reflectors, despite the poor material quality of AlInN reported until very recently. We report an improvement of AlInN material that allowed for su ...
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A light-emitting device comprising a substrate-supported Group III nitride semiconductor region having a p-n junction region for injecting carriers into an optically active region, wherein the p-n junction region comprises an aluminum indium gallium nitrid ...
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In the present paper, we address a review of group-III nitride quantum wells and quantum dots realized by molecular beam epitaxy (MBE) using ammonia as a nitrogen source. Some important features of the growth of nitrides by MBE using ammonia are pointed ou ...
GaN/Al0.1Ga0.9N quantum wells (QWs) are grown by molecular beam epitaxy on (0001) sapphire and (0001) GaN single-crystal substrates. Their optical properties are investigated by temperature-dependent photoluminescence (PL). Ar room temperature, the integra ...
The lack of appropriate substrates has delayed the realisation of devices based on III-nitrides. Currently, the heteroepitaxial growth of GaN by metal organic vapour phase epitaxy (MOVPE) produces GaN layers which, despite huge densities of dislocations, a ...