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Self heating in AlInN/AlN/GaN high power devices: Origin and impact on contact breakdown and IV characteristics

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Self heating in AlInN/AlN/GaN high power devices: Origin and impact on contact breakdown and IV characteristics

Graph Chatbot

Chattez avec Graph Search

Field-Effect Transistors Based on ZnO Nanowires

Piezoresistive n-Type 4H-SiC Pressure Sensor with Membrane Formed by Mechanical Milling

Physical Properties of Al1-xInxN/(AIN)/GaN (0.07

Development of High Temperature Platinum TSVs

Proposal and Performance Analysis of Normally Off n(++) GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

205-GHz (Al,In)N/GaN HEMTs

Temperature mapping of Al0.85In0.15N/AlN/GaN high electron mobility transistors through micro-photoluminescence studies

Temperature mapping of Al0.85In0.15/AlN/Gan high electron mobility transistors through micro-photoluminescence studies

Investigation of bias-dependent series resistances and barrier height in Double Gate Schottky MOSFETs

Investigation of bias-dependent series resistances and barrier height in Double Gate Schottky MOSFETs

Field-Effect Transistors Based on ZnO Nanowires

Development of High Temperature Platinum TSVs

205-GHz (Al,In)N/GaN HEMTs

Physical Properties of Al1-xInxN/(AIN)/GaN (0.07

Temperature mapping of Al0.85In0.15N/AlN/GaN high electron mobility transistors through micro-photoluminescence studies

Temperature mapping of Al0.85In0.15/AlN/Gan high electron mobility transistors through micro-photoluminescence studies

Investigation of bias-dependent series resistances and barrier height in Double Gate Schottky MOSFETs

Investigation of bias-dependent series resistances and barrier height in Double Gate Schottky MOSFETs

Piezoresistive n-Type 4H-SiC Pressure Sensor with Membrane Formed by Mechanical Milling

Proposal and Performance Analysis of Normally Off n(++) GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier