Standard-free composition measurements of AlxIn1-xN by low-loss electron energy loss spectroscopy
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GaAs/AlxGa1-xAs multiple-quantum-well (MQW) structures with identical well thicknesses but with different Al contents x in the barrier (x almost-equal-to 0.1, 0.2, 0.45, and 1) were grown by molecular-beam epitaxy to study the impurity-induced disordering ...
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GaAlAs/GaAs and GaInAs/InP thick layers, single and multiple quantum wells were grown by atmospheric pressure metalorganic vapor phase epitaxy. Auger electron spectroscopy, wedge transmission electron microscopy, x-ray diffraction, low-temperature photolum ...
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