Publication

SWNT array resonant gate MOS transistor

Publications associées (40)

Graph Chatbot

Chattez avec Graph Search

Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.

AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.

Connectez-vous pour utiliser Chat avec Graph Search

Multifunctional Hyperelastic Structured Surface for Tunable and Switchable Transparency

Romain Christophe Rémy Fleury, Rayehe Karimi Mahabadi, Taha Goudarzi

We leverage the crucial hyperelastic properties of a multifunctional structured surface to optimize the reconfigurability of the electromagnetic transmission under large nonlinear mechanical deformations. This multiphysics, multifunctional, hyperelastic st ...

2021

Many metamaterials, including metal wire grid, was invented to enhance the performance of the antenna in the last decade. A novel zero index metamaterial (ZIM), consisting of double metal layers with periodic circular perforation cells, was proposed and st ...

IEEE2020

Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Teodor Rosca, Matteo Cavalieri

Nanowire tunnel field-effect transistors (TFETs) have been proposed as the most advanced one-dimensional (1D) devices that break the thermionic 60 mV/decade of the subthreshold swing (SS) of metal oxide semiconductor field-effect transistors (MOSFETs) by u ...

AMER CHEMICAL SOC2020

, , , ,

In this paper, we present a detailed investigation of the impact of fin width (w(fin)) on tri-gate AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs). As w(fin) is reduced, the threshold voltage (V-TH) increases, which is due ...

2019

Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

Mihai Adrian Ionescu, Christian Enz, Igor Stolichnov, Farzan Jazaeri, Ali Saeidi

Boltzmann electron energy distribution poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Neg ...

2019

Flexible Zinc-Tin Oxide Thin Film Transistors Operating at 1 kV for Integrated Switching of Dielectric Elastomer Actuators Arrays

Danick Briand, Herbert Shea, Samuel Rosset, Alexandre Poulin, Alexis Pierre Henri Marette, Nadine Besse

Flexible high-voltage thin- lm transistors (HVTFTs) operating at more than 1 kV are integrated with compliant dielectric elastomer actuators (DEA) to create a exible array of 16 independent actuators. To allow for high-voltage operation, the HVTFT implemen ...

Wiley-Blackwell2017

Breaking Lorentz reciprocity to overcome the time-bandwidth limit in physics and engineering

Hatice Altug, Kosmas Tsakmakidis

A century-old tenet in physics and engineering asserts that any type of system, having bandwidth Delta omega, can interact with a wave over only a constrained time period Delta t inversely proportional to the bandwidth (Delta t-Delta w similar to 2 pi). Th ...

2017

, , ,

We studied structural changes in a 5 unit cell thick La1.96Sr0.04CuO4 film, epitaxially grown on a LaSrAlO4 substrate with a single unit cell buffer layer, when ultra-high electric fields were induced in the film by applying a gate voltage between the film ...

Nature Publishing Group2016

, ,

We report wafer-level fabrication of resonant-body, carbon nanotube (CNT)field-effect transistors (FETs) in a dual-gate configuration. An integration density of >10(6) CNTFETs/cm(2), an assembly yield of >80%, and nanoprecision have been simultaneously obt ...

Amer Chemical Soc2015

Hot-electron temperature (T-e) in InAlN/GaN high-electron-mobility transistors (HEMTs) was determined using electroluminescence spectroscopy as a function of gate voltage and correlated with the Te distribution determined by hydrodynamic simulations. Good ...

Ieee-Inst Electrical Electronics Engineers Inc2014