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SWNT array resonant gate MOS transistor

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We leverage the crucial hyperelastic properties of a multifunctional structured surface to optimize the reconfigurability of the electromagnetic transmission under large nonlinear mechanical deformations. This multiphysics, multifunctional, hyperelastic st ...

2021

Many metamaterials, including metal wire grid, was invented to enhance the performance of the antenna in the last decade. A novel zero index metamaterial (ZIM), consisting of double metal layers with periodic circular perforation cells, was proposed and st ...

IEEE2020

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Nanowire tunnel field-effect transistors (TFETs) have been proposed as the most advanced one-dimensional (1D) devices that break the thermionic 60 mV/decade of the subthreshold swing (SS) of metal oxide semiconductor field-effect transistors (MOSFETs) by u ...

AMER CHEMICAL SOC2020

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In this paper, we present a detailed investigation of the impact of fin width (w(fin)) on tri-gate AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs). As w(fin) is reduced, the threshold voltage (V-TH) increases, which is due ...

2019

Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

Mihai Adrian Ionescu, Christian Enz, Igor Stolichnov, Farzan Jazaeri, Ali Saeidi

Boltzmann electron energy distribution poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Neg ...

2019

Flexible Zinc-Tin Oxide Thin Film Transistors Operating at 1 kV for Integrated Switching of Dielectric Elastomer Actuators Arrays

Danick Briand, Herbert Shea, Samuel Rosset, Alexandre Poulin, Alexis Pierre Henri Marette, Nadine Besse

Flexible high-voltage thin- lm transistors (HVTFTs) operating at more than 1 kV are integrated with compliant dielectric elastomer actuators (DEA) to create a exible array of 16 independent actuators. To allow for high-voltage operation, the HVTFT implemen ...

Wiley-Blackwell2017

Breaking Lorentz reciprocity to overcome the time-bandwidth limit in physics and engineering

Hatice Altug, Kosmas Tsakmakidis

A century-old tenet in physics and engineering asserts that any type of system, having bandwidth Delta omega, can interact with a wave over only a constrained time period Delta t inversely proportional to the bandwidth (Delta t-Delta w similar to 2 pi). Th ...

2017

Oxygen Displacement in Cuprates under Ionic Liquid Field-Effect Gating

Davor Pavuna, Guy Joseph Günter Dubuis, Ivan Bozovic, Xi He

We studied structural changes in a 5 unit cell thick La1.96Sr0.04CuO4 film, epitaxially grown on a LaSrAlO4 substrate with a single unit cell buffer layer, when ultra-high electric fields were induced in the film by applying a gate voltage between the film ...

Nature Publishing Group2016

Wafer-Level Hysteresis-Free Resonant Carbon Nanotube Transistors

Mihai Adrian Ionescu, Ji Cao, Sebastian Thimotee Bartsch

We report wafer-level fabrication of resonant-body, carbon nanotube (CNT)field-effect transistors (FETs) in a dual-gate configuration. An integration density of >10(6) CNTFETs/cm(2), an assembly yield of >80%, and nanoprecision have been simultaneously obt ...

Amer Chemical Soc2015

Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors

Nicolas Grandjean, Jean-François Carlin

Hot-electron temperature (T-e) in InAlN/GaN high-electron-mobility transistors (HEMTs) was determined using electroluminescence spectroscopy as a function of gate voltage and correlated with the Te distribution determined by hydrodynamic simulations. Good ...

Ieee-Inst Electrical Electronics Engineers Inc2014