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Dielectric and acoustical high frequency characterisation of PZT thin films

Publications associées (99)

A 5G n77 Filter Using Shear Bulk Mode Resonator With Crystalline X-cut Lithium Niobate Films

This paper presents the use of a shear bulk acoustic mode resonator made of a membrane of X-cut lithium niobate (LiNbO3) for ultra-wide band filter applications. Aluminum interdigitated (IDT) electrodes are deposited on top of the LiNbO3 thin film as well ...

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Development of Thin Film Lithium Niobate Shear Bulk Acoustic Wave Resonators

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RF MEMS piezoelectric acoustic resonators are the essential building blocks for RF filters used in RF front-end modules for wireless mobile communication due to their compact size in the MHz-GHz frequency range, high Quality factors and large relative band ...

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A formula for the admittance of laterally excited bulk wave resonators (XBARs)

Luis Guillermo Villanueva Torrijo, Soumya Yandrapalli, Victor Plessky

The recently invented laterally excited bulk wave resonators (XBARs) demonstrate outstanding parameters suitable for the design of low loss filters for the fifth generation of mobile phones. The operation of XBARs can be interpreted as an excitation of ant ...

WILEY2021

Thin Film Devices For 5G Communications

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Piezoelectric-based resonators are some of the most used devices in the world. Invisible to most people, they constitute key elements for your mobile phone communications. With the advent of 50, the current technologies for piezoelectric resonators need to ...

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Growth, Integration, and Functional Characterization of AlScN Thin Films for RF MEMS Devices

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Mobile communication has grown explosively in recent years, leading to a strong demand for cheap, but high-performing bandpass filters with low insertion loss and smaller size. Surface acoustic wave (SAW) and thin film bulk acoustic wave (BAW) resonators r ...

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Dielectric Actuation Techniques at the Nanoscale: Piezoelectricity and Flexoelectricity

Kaitlin Marie Howell

Micro- and nanoelectromechanical systems (MEMS/NEMS) have long shown their potential to disrupt the established technologies. Over the past 15 years, MEMS have become fundamental components in filters, accelerometers, gyroscopes and gas sensors. MEMS are n ...

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Accurate property determination of the piezoelectric thin film material Al(1-x)Sc(x)N is necessary for designing the next generation of radio frequency resonators in mobile communication, and for testing results of ab initio calculations. Sound velocity an ...

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Non-destructive piezoelectric characterisation of Sc doped aluminium nitride thin films at wafer level

Paul Muralt, Stefan Mertin, Clemens Benedict Nyffeler, Andrea Mazzalai

Scandium doped aluminium nitride (ScAlN) gained much attention during last years, since its piezoelectric response is much enlarged as compared to pure AlN films. Above 30% Sc the films are of high interest for piezoMEMS sensing and actuation, ultrasound g ...

IEEE2019

Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering

Igor Stolichnov, Matteo Cavalieri

Thin film metal-insulator-metal capacitors with undoped HfO2 as the insulator are fabricated by sputtering from ceramic targets and subsequently annealed. The influence of film thickness and annealing temperature is characterized by electrical and structur ...

WILEY2019

Analysis of XBAR resonance and higher order spurious modes

Luis Guillermo Villanueva Torrijo, Soumya Yandrapalli, Victor Plessky

A suspended 400nm thin mono-crystalline ZY cut Lithium Niobate (LN) membrane with narrow interdigital electrodes (IDEs) on top having a pitch of the order of few microns excites standing shear bulk acoustic wave resonance (XBAR) within the membrane through ...

IEEE2019

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