Spin relaxation of free excitons in narrow GaN/AlxGa1-xN quantum wells
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The (sub)-ps relaxation processes in PbSe quantum dots of different sizes were measured by near-IR luminescence upconversion. The early-time spectra are characterized by emission from several low-lying excited states. The direct measurement of the Huang-Rh ...
Several methods are presented for the selective determination of spin-lattice and spin-spin relaxation rates of backbone protons in labeled proteins. The relaxation rates of amide protons in (15)N labeled proteins can be measured by using two-way selective ...
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We report on Raman scattering in hexagonal GaN quantum wells embedded in Al0.11Ga0.89N barriers, The six monolayers thick quantum wells, grown by molecular beam epitaxy, are deposited on a GaN buffer layer. Resonant enhancement of the Raman lines associate ...
We present a newly-developed microwave probe for performing sensitive high-field/multi-frequency electron spin resonance (ESR) measurements under high hydrostatic pressures. The system consists of a BeCu-made pressure-resistant vessel, which accommodates t ...
We investigate the spin relaxation of negatively charged excitons in modulation-doped CdTe quantum wells by time-resolved photoluminescence. The charged exciton spin flip process is found to be very sensitive to the excitation energy but not to a change of ...
The impact ionization of excitonic states is studied in epitaxial GaN films and GaN/AlGaN quantum well structures. The investigation is carried out by optical methods involving the observation of quenching of the exciton photoluminescence under an applied ...
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Two selected examples have been chosen to illustrate the ability of non-resonant Raman scattering to probe phonons in hexagonal GaN-AlN artificial structures. The angular dispersion of polar phonons is investigated in a long period GaN-AlN superlattice and ...