Influence of oxygen content on structure and properties of multi-element AlCrSiON oxynitride thin films
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Nowadays thin films play an important role in everyday life and in industries. Thin film technology has been developed primarily for the growing demand for development of smaller and smaller devices that require advanced materials and new processing techni ...
Al95.5Cr2.5Si2(N1-xOx) thin films were prepared using pulsed DC-magnetron sputtering at 650 degrees C by changing the oxygen to nitrogen ratio (O-2/(O-2 + N-2)) in the reactive gas. The obtained films were characterized by various techniques including XRD, ...
Doped silicon nanowires (NWs) were epitaxially grown on silicon substrates by pulsed laser deposition following a vapour-liquid-solid process, in which dopants together with silicon atoms were introduced into the gas phase by laser ablation of lightly and ...
Aluminum rich oxynitride thin films were prepared using pulsed direct current (DC) magnetron sputtering from an Al95.5Cr2.5Si2 (at.%) target. Two series of films were deposited at 400 degrees C and 650 degrees C by changing the O-2/(O-2 + N-2) ratio in the ...
(001)-textured AIN thin films as needed for longitudinal bulk acoustic wave (BAW) devices exhibit large mechanical stress variations and large orientation variation as a function of growth substrate properties. We prepared thin silicon and silicon dioxide ...
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Multilayered niobium oxynitride films were deposited onto (100) Si using DC magnetron sputtering with a reactive gas pulsing process. The argon and nitrogen flows were kept constant during sputtering of a pure niobium target and the oxygen flow was pulsed ...
Intrinsic, thermal, and hygroscopic contributions to the in-plane residual stress in silicon nitride films on polyimide substrates are identified, based on iso- hygric thermal ramps and isothermal relative humidity jumps, combined with non-linear elastic m ...
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The influence of oxygen content on the properties of cathodic arc-deposited AlCr(OxN1-x) coatings has been studied. All samples were prepared in a nitrogen-rich mixture of N-2 and O-2 at 550 degrees C using lateral rotating arc cathodes (LARC) technology t ...