Abrupt switch based on internally combined Band-To-Band and Barrier Tunneling mechanisms
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This letter proposes a hybrid abrupt switch principle and a corresponding device architecture that combines quantum mechanical band-to-band and barrier tunneling mechanisms. The device overcomes the intrinsically low on-current (I-ON) of conventional tunne ...
We report a simulation-based study of an all-silicon novel device which exploits internally combined quantum mechanical band-to-band and barrier tunneling mechanisms to overcome the intrinsic low current drive limitations of conventional silicon Tunnel FET ...
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