Macroscopic Theory of Charged Domain Walls in Ferroelectrics
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The mechanism of the giant unipolar strain recently observed in a lead-free piezoceramic, 0.92(Bi0.5Na0.5)TiO3-0.06BaTiO(3)-0.02(K0.5Na0.5)NbO3 [S.-T. Zhang, A. B. Kounga, E. Aulbach, H. Ehrenberg, and J. Rodel, Appl. Phys. Lett. 91, 112906 (2007) was inve ...
This review discusses recent advances in understanding origins of large piezoelectric properties in some ferroelectric materials. In particular, it addresses the role of polarization rotation and monoclinic phases. It is suggested that the polarization rot ...
Off-axis electron holography has been used to measure the built-in potential profile across an Al0.85In0.15N/AlN/GaN high electron mobility transistor heterostructure. Profile measurements indicated a polarization-induced electric field of 6.9 MV/cm within ...
The integration of ferroelectrics in electronic devices requires that they be used in the form of thin films, which implies that for such systems finite-size effects related to the presence of a ferroelectric-electrode interface become important. In this t ...
Ferroelectrics are characterised by a spontaneous polarisation that can be reversed by an external electric field. The stability of the polarisation states and the possibility for controlled switching between the states render ferroelectric materials very ...
The role of Fe as an acceptor and Nb as a donor in 0.94−xTiO3–0.06BaTiO3−x (K0.5Na0.5)NbO3 (100xKNN) (x = 0.02 and 0.03) lead-free piezoceramics was investigated. X-ray diffraction analyses show that all the profiles are best-fitted with a cu ...
The converse piezoelectric response of Pb(ZrxTi1−x)O3 ceramics is investigated as a function of material composition. The effects of the crystallographic phase and different dopants on piezoelectric nonlinearity are separately examined. For a linear depend ...
In this paper we report the fabrication and detailed electrical characterization of a Metal-Ferroelectric-Oxide-Semiconductor Capacitor aiming at the extraction of the polarization characteristic. In order to evaluate the electrical performances of the fer ...
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In the framework of the modern theory of polarization, we rigorously establish the microscopic nature of the electric displacement field D. In particular, we show that the longitudinal component of D is preserved at a coherent and insulating interface. To ...
Off-axis electron holography has been used to measure the built-in potential profile across an Al0.85In0.15N/AlN/GaN high electron mobility transistor heterostructure. Profile measurements indicated a polarization-induced electric field of 6.9 MV/cm within ...
