1 W at 785 nm from a frequency-doubled wafer-fused semiconductor disk laser
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In this paper we present briefly two possible approaches for modelling the laser cladding process. The first approach is 2D and consists in finding the shape of the molten pool given the fraction of the laser power which is available at the surface of the ...
An external cavity coupled to a conventional Fabry-Perot GaAs diode laser operating continuously has been found to cause modulation of the light output at a frequency within the range 0.5 to several GHz. The modulation depth is close to 100 percent and the ...
An automated assembly technique for small optical components has been developed. It concerns components such as, e.g., laser diodes and LEDs, fibers, lenses, beamsplitters, polarizers, mirrors, crystals, prisms, diffractive elements or photodiodes. It is b ...
We report on the realization of InGaAs-lnGaAsP separate confinement heterostructure multiple quantum well lasers grown by chemical beam epitaxy. We discuss key growth parameters and characterization by secondary-ion mass spectroscopy, transmission electron ...
A model which takes into account the main phenomena occurring during the laser-cladding process is proposed. For a given laser power, beam radius, powder jet geometry, and clad height, this model evaluates two other processing parameters, namely, the laser ...
