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Top-Gate ZnO Nanowire Transistors and Integrated Circuits with Ultrathin Self-Assembled Monolayer Gate Dielectric

Publications associées (84)

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Multiterminal Memristive Nanowire Devices for Logic and Memory Applications: A Review

Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici

Memristive devices have the potential for a complete renewal of the electron devices landscape, including memory, logic, and sensing applications. This is especially true when considering that the memristive functionality is not limited to two-terminal dev ...

Ieee-Inst Electrical Electronics Engineers Inc2012

Power and Area Efficient MOSFET-C Filter for Very Low Frequency Applications

Seyed Armin Tajalli, Yusuf Leblebici

New circuit design techniques for implementing very high-valued resistors are presented, significantly improving power and area efficiency of analog front-end signal processing in ultra-low power (ULP) biomedical systems. Ranging in value from few hundreds ...

Springer Verlag2012

Disruptive Logic Architectures and Technologies

Pierre-Emmanuel Julien Marc Gaillardon

This book discusses the opportunities offered by disruptive technologies to overcome the economical and physical limits currently faced by the electronics industry. It provides a new methodology for the fast evaluation of an emerging technology from an arc ...

Springer2012

Field-Effect Transistors Based on ZnO Nanowires

Daniel Dominik Kälblein

Semiconductor nanowires are an emerging class of materials with great potential for applications in future electronic devices. The small footprint and the large charge-carrier mobilities of nanowires make them potentially useful for applications with high- ...

EPFL2011

Nanoengineered Silicon: Technology and Applications

Sandro Carrara, Lucia Baldi Unser

Silicon has been, and continues to be, the material support of integrated circuit (IC) technology-the enabling tool of one of the most impressive technological, industrial and social revolution of mankind. Silicon (both in monocrystalline and polycrystalli ...

2011

Self-Assembled Liquid-Gated Zinc Oxide Nanowire Transistors

Vivek Pachauri

This thesis aims at the site-specific realization of self-assembled field-effect transistors (FETs) based on semiconducting Zinc oxide NWs and their application towards chemical and bio-sensing in liquid medium. At first, a solution based growth method for ...

EPFL2011

Integrated Circuits and Logic Operations Based on Single-Layer MoS2

Andras Kis, Branimir Radisavljevic

Logic circuits and the ability to amplify electrical signals form the functional backbone of electronics along with the possibility to integrate multiple elements on the same chip. The miniaturization of electronic circuits is expected to reach fundamental ...

2011

Process Variation and Leakage Power

Bahman Kheradmand Boroujeni

Technology scaling improves the energy, performance, and area of the digital circuits. With further scaling into sub-45nm regime, we are moving toward very low supply (VDD) and threshold voltages (VT), smaller VDD/VT ratio, high leakage current, and large ...

EPFL2011

Tunnel field-effect transistors as energy-efficient electronic switches

Mihai Adrian Ionescu, Heike Riel

Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to inc ...

2011

In-IC Strategies for 3D Devices in Bulk Silicon

Matthieu Bopp

The increase of components density in advanced microelectronics is practically dictated by the device size and the achievable pitch between the devices. Scaling down dimensions of devices and progress in the circuit design allowed following Moore's law dur ...

EPFL2011