Top-Gate ZnO Nanowire Transistors and Integrated Circuits with Ultrathin Self-Assembled Monolayer Gate Dielectric
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The aim of this research is to develop and to evaluate devices and circuits performances based on ultrathin nanograin polysilicon wire (polySiNW) dedicated to room temperature operated hybrid CMOS-"nano" integrated circuits. The proposed polySiNW device is ...
Scaling of semiconductor devices has pushed CMOS devices close to fundamental limits. The remarkable success story of Moore's law during the last 40 years, predicting the evolution of electronic device performances related to miniaturization, has always be ...
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We describe a single chip approach to time resolved fluorescence measurements based on time correlated single photon counting. Using a single complementary metal oxide silicon (CMOS) chip, bump bonded to a 4 × 16 array of AlInGaN UV micro-pixellated light-e ...
We apply metal organic chemical vapour deposition (MOCVD) of HfO2 and of ZrO2 from beta-diketonate precursors to grow high-k gate dielectrics for InAlN/AlN/GaN metal oxide semiconductor (MOS)-high electron mobility transistors (HEMTs). High-k oxides of abo ...
In this paper we investigate the mobility enhancement due to strain in bended NW MOSFETs. Stress of 200MPa to 2GPa, induced by thermal oxidation, is measured in suspended NW FETs by Raman spectroscopy. Mobility enhancement of more than 100% is observed. Pe ...
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The quickening pace of the MOSFET technology scaling has pushed the MOSFET dimension towards 10 nanometer channel length, where it is going to face the following fundamental and performance limiting factors: (i) electrostatic limits, (ii) source to drain t ...
The authors investigate 2 mu m gate-length InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS HEMTs) with 12 nm thick Al2O3 gate insulation. Compared to the Schottky barrier (SB) HEMT with similar design, the MOS HEMT exhibits a ga ...
It has been experimentally observed that the incorporated fluorine will greatly improve the reliability of high-permittivity gate dielectric based transistors, but the role of fluorine passivation on leakage current change through gate is still a debated i ...
This work reports on thermally isolated electronic components for gas sensing applications. The device is composed of an array of 4 MOSFET, a diode and a semiconductor resistor integrated on a micro-hotplate, which is fabricated using bulk micromachining o ...