Single-photon Avalanche Diodes in sub-100nm Standard CMOS Technologies

Edoardo Charbon, Hyungjune Yoon, Mohammad Azim Karami
2011
Article de conférence

Résumé

Single-photon avalanche diodes (SPADs) are evaluated in two sub-100nm CMOS technologies. Several geometries are implemented, whereas premature edge breakdown (PEB) prevention is achieved with n-well rings. The octagonal SPADs are implemented in 90nm and 65nm standard CMOS technologies. Full characterization of SPAD performance is carried out as a function of bias and temperature. To the best of our knowledge, this is the first report of SPAD in any 65nm CMOS technology.

Source officielle

https://infoscience.epfl.ch/record/178147?ln=fr

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Single-photon Avalanche Diodes in sub-100nm Standard CMOS Technologies

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