Publication
All state-of-the-art subthreshold (sub-VT) memories are based on static bitcells, while the feasibility and limitations of dynamic bitcells operated in the sub-VT regime have not been studied yet. For the first time ever, we examine the sub-VT operation of gain-cells and present a fully functional memory array with data retention times that are 10e4X higher than access times.
Martin Odersky, Nada Amin, Fengyun Liu, Sandro Stucki, Paolo Giosuè Giarrusso
David Atienza Alonso, Alexandre Sébastien Julien Levisse, Miguel Peon Quiros, Marco Antonio Rios