First-principles description of ferroelectric/electrode interfaces and properties of not very thin ferroelectric capacitors
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The domain nucleation and growth during the switching process in ferroelectric PZT thin film capacitors was observed using atomic force microscope (AFM) technique combined with a lock-in amplifier. The measured phase difference between the tip vibration si ...
1999
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The pyroelectric properties of Pb1-xCaxTiO3 (x = 0-0.3) thin films have been greatly improved by including porosity in the microstructure. Control of nucleation and growth by variation of the heating rate was used to process porous, low dielectric constant ...
1998
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The switching of the sandwich structure ''ferroelectric+thin dielectric layer'' is theoretically studied. The behavior of the remanent polarization, P-r, coercive field, E(c), maximal polarization on the loop, P-s, and the slope of the hysteresis loop at E ...
A surprising non-cumulative effect of the degradation mechanism (fatigue) of the switched polarization (P-r(s)), was observed in MOCVD and sol-gel prepared Pb(Zr0.47Ti0.53)O-3 (PZT) ferroelectric thin films capacitors (FECAP) with Pt-electrodes. This effec ...
It was recently suggested, basing on the analysis of a wide range of macroscopic experimental results([1-4]), that fatigue in ferroelectric thin film capacitors, particularly in the case of PZT with metallic electrodes (Pt), must be related to the freezing ...