A new single photon avalanche diode in CMOS high-voltage technology
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PN junction rectification is demonstrated in indium nitride. The junction is formed between the n-type surface accumulation layer and the Mg-doped, p-type bulk in a top-contacted thin film structure. The parasitic shorting path between the top contacts is ...
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This paper presents a new modeling methodology accounting for generation and propagation of minority carriers that can be used directly in circuit-level simulators in order to estimate coupled parasitic currents. The method is based on a new compact model ...
Institute of Electrical and Electronics Engineers2010
In this paper, we propose a new category of current-mode Łukasiewicz OR and AND logic neurons and ensuing logic networks along with their ultra-low power realization. The introduced circuits can operate in a wide range of the input signals varying in-betwe ...
This paper presents a new modeling methodology accounting for generation and propagation of minority carriers that can be used directly in circuit-level simulators in order to estimate coupled parasitic currents. The model is based on a new compact model o ...
IEEE Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009
The Model of Uptake with Instantaneous Adsorption and Efflux, MUIAE, describing and predicting the overall Cd uptake by the metal-resistant bacterium Cupriavidus metallidurans CH34, is presented. MUIAE takes into account different processes at the bacteria ...
This paper presents a modeling methodology for substrate current coupling mechanisms. An enhanced model of the diode ensuring continuity of minority carriers is used to build an equivalent schematic, accounting for minority and majority carrier propagation ...
In this thesis, the electronic structures of low-dimensional carbon allotropes have been studied. In particular, the spatially-resolved photocurrent responses of devices comprising carbon nanostructures were investigated through scanning photocurrent micro ...
