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We realized ambipolar field-effect transistors by coupling exfoliated thin flakes of tungsten disulfide (WS2) with an ionic liquid dielectric. The devices show ideal electrical characteristics, including very steep subthreshold slopes for both electrons an ...
This book discusses the opportunities offered by disruptive technologies to overcome the economical and physical limits currently faced by the electronics industry. It provides a new methodology for the fast evaluation of an emerging technology from an arc ...
The utilization of functional organic materials holds great promise for applications in electronic devices. Semiconducting organic molecules are frequently used as channel material in field effect transistors, due to the ease by which they can be assembled ...
The down-scaling of conventional MOSFETs has led to an impending power crisis, in which static power consumption is becoming too high. In order to improve the energy-efficiency of electronic circuits, small swing switches are interesting candidates to repl ...
Interest in PVDF-TrFE copolymers as ferroelectric material for Memory application is driven by the prospect of having low cost, low operating voltage and fully organic device. Some previous studies reported FET designs using copolymers [refs 1,2] but none ...
Semiconductor nanowires are an emerging class of materials with great potential for applications in future electronic devices. The small footprint and the large charge-carrier mobilities of nanowires make them potentially useful for applications with high- ...
The aim of this research is to develop and to evaluate devices and circuits performances based on ultrathin nanograin polysilicon wire (polySiNW) dedicated to room temperature operated hybrid CMOS-"nano" integrated circuits. The proposed polySiNW device is ...
Wireless communications are showing an explosive growth in emerging consumer and military applications of radiofrequency (RF), microwave, and millimeter-wave circuits and systems. Applications include wireless personal connectivity (Bluetooth), wireless lo ...
A 14-MHz in-plane nanoelectromechanical resonator based on a resonant-suspended-gate (RSG) MOSFET principle and integrated in a front-end process is demonstrated. The devices are in-plane flexural vibration mode beams (L = 10 mum, w = 165 nm, and h = 400 n ...
With transistors set to reach their smallest possible size in the next decade, the silicon chip is likely to change dramatically, or be replaced entirely. The transistor industry's path which has been largely shaped by Gordon Moore's famous prediction that ...
