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An in situ diffraction study of domain wall motion contributions to the frequency dispersion of the piezoelectric coefficient in lead zirconate titanate

Publications associées (51)

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Material Parameter Extraction for Complex AlScN Thin Film Using Dual Mode Resonators in Combination with Advanced Microstructural Analysis and Finite Element Modeling

Paul Muralt, Silviu Cosmin Sandu, Mohammad Fazel Parsapour Kolour, Vladimir Pashchenko, Kaoru Yamashita

Accurate property determination of the piezoelectric thin film material Al(1-x)Sc(x)N is necessary for designing the next generation of radio frequency resonators in mobile communication, and for testing results of ab initio calculations. Sound velocity an ...

WILEY2019

Dynamics of domain walls are among the main features that control strain mechanisms in ferroic materials. Here, we demonstrate that the domain-wall-controlled piezoelectric behaviour in multiferroic BiFeO3 is distinct from that reported in classical ferroe ...

2018

Piezoelectric ceramics generate strain through the intrinsic piezoelectric effect, the motion of ferroelectric domain walls, or through field-induced phase transitions. The enhanced piezoelectric properties observed in morphotropic solid solutions arise fr ...

2018

Piezoelectric softening by Nb substitution in (Ba,Pb)ZrO

Nava Setter, Nicola Marzari, Dragan Damjanovic, Alberto Biancoli, David Bahati

Donor doping is commonly applied for softening of the piezoelectric and dielectric properties and facilitation of polarization switching in the ubiquitous Pb(Zr,Ti)O-3 [PZT] ceramics. The origin of the donor-dopant effects is not entirely clear. (Pb,Ba)ZrO ...

Wiley-Blackwell2017

The results of recent studies of domain walls and their interaction with defects in BaTiO3, Pb(Zr, Ti)O-3, and BiFeO3 are discussed. The studies reveal why donor- and acceptor-doped Pb(Zr, Ti)O-3 behave differently, what is the role of stationary charged d ...

Japan Society of Applied Physics2017

The high Curie temperature (T-C similar to 825 degrees C) of BiFeO3 has made this material potentially attractive for the development of high-T-C piezoelectric ceramics. Despite significant advances in the search of new BiFeO3-based compositions, the piezo ...

American Institute of Physics2016

Role of charged defects on the electrical and electromechanical properties of rhombohedral Pb(Zr,Ti)O3 with oxygen octahedra tilts

Dragan Damjanovic

Oxygen octahedra tilting is a common structural phenomenon in perovskites and has been subject of intensive studies, particularly in rhombohedral Pb(Zr,Ti)O3 (PZT). Early reports suggest that the tilted octahedra may strongly affect the domain switching be ...

Amer Physical Soc2016

Piezoelectric Coefficients of AlScN Thin Films in Comparison

Paul Muralt, Ramin Matloub Aghdam, Mahmoud Hadad

Since the discovery of a high piezoelectric response in AlScN by Akiyama and coworkers in 2009, a number of works of other groups confirmed the large increase of piezoelectricity when partially substituting Al cations by Sc cations, as long as the alloy gr ...

Ieee2016

Monocrystalline PZT thin films

Mahamudu Mtebwa

"More with less" has been the motto behind the hardware miniaturization trend in the microelectronics industry since the 1970s. Active research in the growth of oxide films, including ferroelectrics, which started soon after, followed the same trend. Meanw ...

EPFL2015

Converse mode piezoelectric coefficient for lead zirconate titanate thin film with interdigitated electrode

Paul Muralt, Ramin Matloub Aghdam, Robin Nigon, Silviu Cosmin Sandu, Andrea Mazzalai, Nachiappan Chidambaram, Davide Balma

The use of interdigitated electrodes (IDEs) in conjunction with ferroelectric thin films shows many attractive features for piezoelectric MEMS applications. In this work, growth of {1 0 0}-textured lead zirconate titanate (PZT) thin films was achieved on i ...

Institute of Physics2015