Modeling picosecond electron dynamics of pump-probe intersubband spectroscopy in n-type Ge/SiGe quantum wells
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
We introduce a density-functional perturbational scheme based on ultrasoft pseudopotentials for calculating dielectric tensors of periodic systems. We obtain a variational functional for the second-order derivative of the energy with respect to an electric ...
We discuss a novel approach to measure the electron phase-relaxation length and femtosecond lifetimes at surfaces. It relies on the study of the spatial decay of quantum interference patterns in the local density of states (LDOS) with the STM. The method h ...
When electrons are subject to a potential with two incommensurate periods, translational invariance is lost, and no periodic band structure is expected. However, model calculations based on nearly free one-dimensional electrons and experimental results fro ...
The use of electron energy loss spectroscopy (EELS) in determining the electronic properties of Si and thickness dependent loss function of Si with 0.14 eV energy resolution were investigated. The dielectric response function was used to describe the inter ...
The Hohenberg-Kohn theorem states that the ground state electron density completely determines the external potential acting on an electron system. Inspired by this fundamental theorem, we developed a novel approach to map directly the electron potential i ...
We have grown high-electron mobility transistor structures in the Al0.3Ga0.7As/In0.25Ga0.75As/GaAs material system with In0.25Ga0.75As channel thicknesses in the range 40-200 Angstrom. We have monitored the onset of channel relaxation using Hall mobility m ...
The electron states of weakly-one-dimensional quantum wires are computed using the adiabatic approximation in the framework of the k . p theory and the envelope-function approximation. The computed transition rates of electrons from one confined state to a ...
The adiabatic approximation is used to describe the electron states of weakly-one-dimensional quantum wires. A clear order is evidenced in the longitudinal optical (LO) phonon mediated transition rates with respect to the quantum numbers of the confined st ...
A study of the elastic exciton-exciton Coulomb scattering in a semiconductor quantum well is presented, including the interexciton exchange of carriers and the spin degrees of freedom. The theoretical results show that electron-electron and hole-hole excha ...