Quantum Wire - Quantum Dot Systems Grown in Inverted Pyramids
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We investigated the optical properties of excitons in quasi-one-dimensional semiconductor quantum structures by photoluminescence and photoluminescence excitation: High-quality GaAs/AlxGa1-xAs heterostructures were grown using low-pressure organometallic c ...
We have calculated the effect of alloy interdiffusion on the one-dimensional energy confinement of (Al,Ga)As/GaAs crescent shaped quantum wire structures. We show that the energy splitting between excited states may be greatly enhanced by the interdiffusio ...
The photoluminescence energy of strained (Ga, In)As quantum wells grown on (001) GaAs slightly misoriented (2 degrees-6 degrees) towards (111)A exhibits a blue shift when compared to quantum wells grown on perfectly oriented substrates. It is shown that th ...
Spatially resolved x-ray secondary electron photoemission spectra revealed lateral changes in quantum efficiency and chemical composition of polycrystalline cesium iodide photodetectors. Such changes depend on the substrate (stainless steel or aluminum). T ...
We demonstrate a novel all-optical spatial Light modulator capable of megahertz modulation rates. It is based on the quantum-confined Stark effect, but the modulating electric field is entirely photogenerated by strongly asymmetric photocarrier transfer in ...
In this letter the liquid phase epitaxial growth of In0.71Ga0.29As0.68P0.32 (lambda(g) = 1.32 mum) single quantum well structures lattice matched to (001) InP substrates is reported. The electrical and optical confinement was formed either by InP or In0.88 ...
Strained In0.35Ga0.65As/GaAs quantum wells of various thicknesses (6-16 monolayers) obtained by molecular beam epitaxy at 400 degrees C were studied by optical pumping techniques at 4 K. Improved quantum well optical properties, due to significant increase ...
Polaritons in confined systems are introduced and their dispersion is calculated. The amount of squeezing of confined excitons polaritons in GaAs quantum wells is evaluated. ...
We present a study of the electronic properties of In(x)Ga1-xAs/GaAs quantum wells when grown on vicinal substrates, based on photoluminescence (PL) and PL excitation experiments under high magnetic field. The samples measured have a wide range of In conte ...
We investigate the dependence of four-wave mixing response on the photon energy close to the fundamental exciton (X) resonance in GaAs quantum wells. We find that cross-polarised incident fields give rise to a non-linear signal which decays faster at energ ...
