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Deep reactive ion etching and focused ion beam combination for nanotip fabrication

Publications associées (38)

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Annealing and Etching Processes for Hafnium Carbide MEMS

Nicolas Andres Avellan Marin

HfC has been very under-investigated due to its rarity and synthesising difficulty. Its potential for MEMS and NEMS applications has been recognized and is the object of an ongoing feasibility study for production since 2022. We continue on this impulse by ...

2023

Micromachining of Hafnium Carbide

Fabian Linus Bauer

During this project, the microfabrication of Hafnium Carbide (HfC) was investigated. Multiple tools were considered and tested for their compatibility and effectiveness when working with HfC. The main method of choice for the machining of HfC thin films wa ...

2023

The project focuses on etching properties of the atomic layer deposition (ALD) of Al2O3. For this purpose, etching processes such as plasma etch with sulfur hexafluoride (SF6), gas etch with xenon difluoride (XeF2), wet etch with MIF developer (726 MIF) as ...

2023

The objective of this semester project is the fabrication of suspended piezoelectrically transduced resonators and to test and compare the quality of the piezoelectric layer using different processes and parameters. A functional fabrication process by lift ...

2023

The purpose of this project is to investigate the suitability of wet etching methods such as KOH etching for silicon micromoulds fabrication. Those moulds are intended for preceramic polymer (PCP) casting and specific requirements regarding the profile of ...

2020

Single crystal diamond micro-disk resonators by focused ion beam milling

Niels Quack, Teodoro Graziosi, Sichen Mi

We report on single crystal diamond micro-disk resonators fabricated in bulk chemical vapor deposition diamond plates (3 mm x 3 mm x 0.15 mm) using a combination of deep reactive ion etching and Focused Ion Beam (FIB) milling. The resulting structures are ...

AMER INST PHYSICS2018

Monolithic Fabrication of Silicon Nanowires Bridging Thick Silicon Structures

Davide Sacchetto, Yusuf Leblebici, Oliver Peric, Zuhal Tasdemir

A monolithic process is developed for the fabrication of Si nanowires within thick Si substrates. A combination of anisotropic etch and sidewall passivation is utilized to protect and release Si lines during the subsequent deep etch. An etch depth of 10 mu ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2018

Wafer-level micro-structuring of glassy carbon

Hans Peter Herzig, Toralf Scharf, Karin Prater, Loïc Etienne Hans, Cédric Kilchoer

Glassy carbon is used nowadays for a variety of applicationsbecause of its mechanical strength, thermal stability and non-sticking adhesion properties. One application is glass molding that allows to realize high resolution diffractive optical elements on ...

Spie-Int Soc Optical Engineering2014

High aspect ratio etching of nanopores in PECVD SiC through AAO mask

Jürgen Brugger, Songmei Wu, Vaida Auzelyte, Wei Tang

We present in this work the fabrication of high aspect ratio nanopores in 500 nm PECVD SiC films through AAO (anodic aluminum oxide) mask. The initial AAO thin film is 180 nm thick and the diameter of nanopores is 33 ± 7 nm. We have used three plasma chemi ...

IEEE2013

Méthode de décapage sélective d'un matériau sur un substrate en quartz par l'utilisation d'un faisceau -induit

Patrik Willi Hoffmann, Michel Rossi, Tristan Bret, Xavier Multone

A method and apparatus for local beam processing using a beam activated gas to etch material are described. Compounds are disclosed that are suitable for beam-induced etching. The invention is particularly suitable for electron beam induced etching of chro ...

2012