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Contact properties of high-mobility, air-stable, low-voltage organic n-channel thin-film transistors based on a naphthalene tetracarboxylic diimide

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Contact properties of high-mobility, air-stable, low-voltage organic n-channel thin-film transistors based on a naphthalene tetracarboxylic diimide

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Chattez avec Graph Search

Field-Effect Transistors Based on ZnO Nanowires

Process Variation and Leakage Power

Polarization Screening in Multiferroic (Ga,Mn)As/P(VDF-TrFE) Transistors

Self heating in AlInN/AlN/GaN high power devices: Origin and impact on contact breakdown and IV characteristics

Fluoroalkylphosphonic acid self-assembled monolayer gate dielectrics for threshold-voltage control in low-voltage organic thin-film transistors

The Effect of Interface Modification on the Properties of Organic Thin-Film Transistors

Weak Inversion for Ultra Low-Power and Very Low-Voltage Circuits

Investigation of bias-dependent series resistances and barrier height in Double Gate Schottky MOSFETs

Investigation of bias-dependent series resistances and barrier height in Double Gate Schottky MOSFETs

The Equivalent Electron Density Concept for Static and Dynamic Modeling of the IGBT Base in Soft- and Hard-Switching Applications

Field-Effect Transistors Based on ZnO Nanowires

Process Variation and Leakage Power

Fluoroalkylphosphonic acid self-assembled monolayer gate dielectrics for threshold-voltage control in low-voltage organic thin-film transistors

Self heating in AlInN/AlN/GaN high power devices: Origin and impact on contact breakdown and IV characteristics

The Equivalent Electron Density Concept for Static and Dynamic Modeling of the IGBT Base in Soft- and Hard-Switching Applications

Weak Inversion for Ultra Low-Power and Very Low-Voltage Circuits

Polarization Screening in Multiferroic (Ga,Mn)As/P(VDF-TrFE) Transistors

The Effect of Interface Modification on the Properties of Organic Thin-Film Transistors

Investigation of bias-dependent series resistances and barrier height in Double Gate Schottky MOSFETs

Investigation of bias-dependent series resistances and barrier height in Double Gate Schottky MOSFETs