Free volume in ionic liquids: a connection of experimentally accessible observables from PALS and PVT experiments with the molecular structure from XRD data

In the current work, free volume concepts, primarily applied to glass formers in the literature, were transferred to ionic liquids (ILs). A series of 1-butyl-3-methylimidazolium (C4MIM) based ILs was investigated by Positron Annihilation Lifetime Spectroscopy (PALS). The phase transition and dynamic properties of the ILs [C4MIM][X] with X = Cl, BF4, PF6, OTf, NTf2 and B(hfip)(4) were reported recently (Yu et al., Phys. Chem. Chem. Phys., 2012, 14, 6856-6868). In this subsequent work, attention was paid to the connection of the free volume from PALS (here the mean hole volume, < v(h)>) with the molecular structure, represented by volumes derived from X-ray diffraction (XRD) data. These were the scaled molecular volume V-m,V-scaled and the van der Waals volume V-vdw. Linear correlations of < v(h)> at the "knee'' temperature (< v(h)>(T-k)) with V-m,V-scaled and V-vdw gave good results for the C4MIM series. Further relationships between volumes from XRD data with the occupied volume V-occ determined from PALS/PVT (Pressure Volume Temperature) measurements and from Sanchez-Lacombe Equation of State (SL-EOS) fits were elaborated (V-occ(SL-EOS) approximate to 1.63 V-vdw, R-2 = 0.981 and V-occ(SL-EOS) approximate to 1.12 V-m,V-scaled, R-2 = 0.980). Finally, the usability of V-m,V-scaled was justified in terms of the Cohen-Turnbull (CT) free volume theory. Empirical CT type plots of viscosity and electrical conductivity showed a systematic increase in the critical free volume with molecular size. Such correlations allow descriptions of IL properties with the easily accessible quantity V-m,V-scaled within the context of the free volume.

Urotropin azelate: a rather unwilling co-crystal

Gervais Chapuis, Kurt Schenk

Urotropin (U) and azelaic acid (AA) form 1:1 co-crystals (UA) that give rise to a rather complex diffraction pattern, the main features of which are diffuse rods and bands in addition to the Bragg reflections. UA is characterized by solvent inclusions, parasite phases, and high vacancy and dislocation densities. These defects compounded with the pronounced tendency of U to escape from the crystal edifice lead to at least seven exotic phase transitions (many of which barely manifest themselves in a differential scanning calorimetry trace). These involve different incommensurate phases and a peritectoid reaction in the recrystallization regime (T-h >0.6). The system may be understood as an OD (order-disorder) structure based on a layer with layer group P(c)c2 and cell a(o) similar or equal to 4.7, b similar or equal to 26.1 and c similar or equal to 14.4 Angstrom. At 338 K the layer stacking is random, but with decreasing temperature the build-up of an orthorhombic MDO (maximal degree of order) structure with cell a(1) = 2a(o), b(1) = b, c(1) = c and space group Pcc2 is begun (at similar to 301 K). The superposition structure of the OD system at T = 286 (1) K with space group Bmmb and cell (a) over cap = 2a(o), (b) over cap = b and (c) over cap = c/2 owes its cohesion to van der Waals interactions between the AA chains and to three types of hydrogen bonds of varied strength between U-U and U-AA. Before reaching completion, this MDO structure is transformed, at 282 K, into a monoclinic one with cell a(m) = a(o) + c/4, b(m) = b, c(m) = -2(a(o) + c/2), space group P2(1)/c, spontaneous deformation similar to2degrees, and ferroelastic domains. This transformation is achieved in two steps: first a furtive triggering transition, which is not yet fully understood, and second an improper ferroelastic transition. At similar to 233 K, the system reaches its ground state (cell a(M) = a(m), bM = b, c(M) = c(m) and space group P2(1)/c) via an irreversible transition. The phase transitions below 338 K are described by a model based on the interaction of two thermally activated slip systems. The OD structure is described in terms of a three-dimensional Monte Carlo model that involves first- and second-neighbour interactions along the a axis and first-neighbour interactions along the b and c axes. This model includes random shifts of the chains along their axes and satisfactorily accounts for most features that are seen in the observed diffraction pattern.

2003

Etude par microscopie électronique à transmission à haute résolution de l'élargissement thermique des parois de domaines ferroélectriques dans un système de premier ordre

The macroscopic properties of ferroelectric materials depend directly on the domain configuration and the structure of the domain boundaries. For this reason, their study is of great scientific and technological interest. Several models have been developed to describe the properties of domain walls (structure, thickness, stress at the interface, mobility, …). However, few quantitative experimental observations of ferroelectric domain walls at an atomic scale have been reported, and even less results exist at higher temperatures. The ferroelectric domain-wall thickness is an important parameter whose behavior as a function of temperature is directly related to the order of the phase transition. In a second-order system, the temperature dependence of the domain-wall thickness follows a power law L ~ (Tc - T)-ω where ω is the critical exponent characterizing the divergence of L near the critical temperature Tc The predictions concerning the numerical value of are different depending on the theoretical model considered. Nevertheless, the majority of ferroelectric materials are known to undergo a first-order transition. In these systems the domain-wall thickness increases when the transition temperature is approached, but without diverging as for a second-order phase transition. The major objective of this work was to measure this broadening predicted by the theory for the first time at the approach of the phase transition temperature. We have shown that high resolution transmission electron microscopy is powerful technique for the study of ferroelectric domain walls not only at room temperature but also at higher temperatures. This method allows a direct and local observation of interfaces at an atomic scale which is a considerable advantage over diffraction techniques (X-ray, neutron, electron) and most of the other electron microscopy methods. However, the requirements of this method concerning the performance of the optical system of the microscope, the quality of the specimen and its stability in the column are very high, and today high resolution microscopy at high temperature remains a major challenge. The domain-wall thickness is obtained from the measurement of the crystal lattice distortion near the interface using two different numerical techniques of image analysis. The first method is based on the accurate determination of the center of bright peaks which appear on high resolution images for a judicious choice of the experimental parameters (delocalization and crystal thickness) and which represent the crystal lattice nodes. The second technique consists in selecting a circular region of the power spectrum around a reflection peak, centering the Fourier space on this reflection and performing the inverse Fourier transform. The information about the local displacement of atomic planes corresponding to the selected reflection is extracted form the phase component of the obtained complex image. Both techniques have been successfully applied to the measurement of the thickness of the 90° ferroelectric domain walls in PbTiO3 single crystals. This perovskite presents a first order phase transition at Tc = 492.2°C. which corresponds to the transformation of the crystal from the high-temperature paraelectric cubic phase to the low-temperature ferroelectric tetragonal phase. For the first time, the thermal broadening of domain walls has been measured quantitatively using HRTEM. The results are compared with the predictions made by phenomenological theories. We find that the domain wall thickness increases continuously from 0.7 nm at room temperature up to 5.5 nm near the transition temperature. Our results are consistent with those obtained by other authors at room temperature and those of a very recent study performed at higher temperatures using weak-beam microscopy. The measured domain-wall broadening is greater than the one predicted by a three-dimensional Ginzburg-Landau model where the polarization which is the primary order parameter is coupled to the elastic strain which plays the role of secondary order parameter. Our results are better described by a one-dimensional Ginzburg-Landau model without secondary order parameter. In this case the gradient coupling coefficient κ of the Ginzburg-Landau free energy is found to be 1.3 · 10-10 m3F-1. The methods developed for the measurement of the domain-wall thickness can by applied not only to other first-order ferroelectric crystals but also to ferroelectric systems presenting a second-order phase transition thus allowing the determination of the critical exponent ω. Characteristics only present in 2-D systems could also be detected by studying very thin specimens. Moreover, the same techniques can be adapted to the study of domain walls in purely ferroelastic materials.

EPFL2000

Normal state transport properties of novel superconductors

Balazs Sipos

The discovery of high temperature superconductivity in the cuprates in 1986 has boosted the research in strongly correlated materials. One strong motivation was and stays the understanding the high-Tc phenomenon with the hope that one can ultimately engineer new materials with even higher Tc. Besides the in-depth investigation of cuprates, there is a strong tendency in the solid state community to find new superconductors, which by themselves are interesting for applications, or by their properties they can contribute to the understanding of the high-Tc phenomenon. The program of my doctoral thesis was three-fold: i) to address one important issue in the cuprate superconductors, that of the role of homogeneity in the underdoped part of the phase diagram; ii) what is the effect of disorder in MgB2 superconductor, which has high potentials for applications; iii) to discover new superconductors in the family of transition metal dichalcogenides. All these materials are in some sense unconventional superconductors. The cuprates by their high Tc and the symmetry of the order parameter, MgB2 by its two-band superconductivity and Tc of 39 K, and the dichalcogenides by the appearance of superconductivity on the background of competing interactions. Measurements of transport properties, such as resistivity and thermoelectric power, were used to get insight in the behavior of these materials. Besides temperature as variable, I applied high pressure, extreme magnetic fields and controlled disorder introduced by fast electron irradiation. In the first part I present the pressure dependent study of two members of the transition metal dichalcogenides having 1T structure, 1T-TiSe2 and 1T-TaS2, where superconductivity was never observed in a pristine sample. 1T-TiSe2 has a CDW phase below 220 K which origin, weather it is driven by an excitonic mechanism or by a Jahn-Teller distortion, is an ongoing question. By applying pressure I showed that the pristine sample is superconducting in the pressure range of 2.0–4.0 GPa. This range remarkably coincides with the short range fluctuating CDW before its disappearance at the upper pressure value. If CDW is due to excitonic interactions than our observations suggest that it can be at the origin of superconductivity, as well. The second dichalcogenide is the 1T-TaS2, where a Mott-insulator phase appears on the top of a commensurate CDW. By applying pressure I was able to melt that Mott-phase, and reveal that the material is superconducting above 2.5 GPa with Tc of 5.9 K. Unexpectedly, superconductivity is born from a nonmetallic phase, and stays remarkably stable up to the highest applied pressure of 24 GPa. In the second part I tried to give my contribution to the field of high-Tc superconductors. I carefully selected few high quality underdoped Bi2Sr2PrxCa1-xCu2O8-δ sample, to address the nature of the low temperature ground state by applying high magnetic field. Although former measurements by other groups showed that at high underdoping, the ground state is an insulator, I found that a sample with as low Tc as 15 K exhibits metallic behavior up to 60 T. Furthermore, I showed that a inhomogeneous distribution of the doping atoms can completely mask the intrinsic normal state of a high-Tc superconductor. In the last part of my thesis I focused on the two-band superconductor MgB2 by studying the scattering between the bands by the means of the Matthiessen's rule. I made a systematic study of the influence of defects created by fast electron irradiation, and found that the the Matthiessen's rule is satisfied for the defect concentration range I induced. I further compare the influence of defects on the critical temperature and the residual resistivity in MgB2 with superconductors with various order parameters, and found that the decrease-rate of Tc in our system is within the range of a response of a superconductor with an s-wave order parameter.

EPFL2008