Publication

Three-Dimensional Magneto-Photoluminescence as a Probe of the Electronic Properties of Crystal-Phase Quantum Disks in GaAs Nanowires

Publications associées (55)

Nonlinear motion and mechanical mixing in as-grown GaAs nanowires

Anna Fontcuberta i Morral, Federico Matteini

We report nonlinear behavior in the motion of driven nanowire cantilevers. The nonlinearity can be described by the Duffing equation and is used to demonstrate mechanical mixing of two distinct excitation frequencies. Furthermore, we demonstrate that the n ...

American Institute of Physics2014

Charge carrier generation, relaxation, and recombination in polytypic GaAs nanowires studied by photoluminescence excitation spectroscopy

Pierre Michel Corfdir, Emanuele Uccelli

We report results of a study of polytypic GaAs nanowires using low-temperature photoluminescence excitation spectroscopy. The nanowire ensemble shows a strong absorption at 1.517 eV, as a result of resonant generation of heavy-hole excitons in the zinc-ble ...

American Institute of Physics2013

Bandgap engineering in a nanowire: self-assembled 0, 1 and 2D quantum structures

Inherent to the nanowire morphology is the exciting possibility of fabricating materials organized at the nanoscale in three dimensions. Composition and structure can be varied along and across the nanowire, as well as within coaxial shells. This opens up ...

Elsevier2013

Effects of surface oxide formation on germanium nanowire band-edge photoluminescence

Shruti Thombare

The effect of intentional surface oxide formation on band-edge photoluminescence (PL) of Ge nanowires was investigated. Thermal oxidation in molecular O-2 was used to produce a surface oxide layer on assemblies of single crystal nanowires grown by the vapo ...

American Institute of Physics2013

Global gyrokinetic simulations of TEM microturbulence

Laurent Villard, Stephan Brunner, Alberto Bottino, Sébastien Jolliet, Ben McMillan, Thibaut Vernay

Global gyrokinetic simulations of electrostatic temperature-gradient-driven trapped-electron-mode (TEM) turbulence using the delta f particle-in-cell code ORB5 are presented. The electron response is either fully kinetic or hybrid, i.e. considering kinetic ...

Iop Publishing Ltd2013

Pressure Tuning of the Optical Properties of GaAs Nanowires

Anna Fontcuberta i Morral, Emanuele Uccelli

The tuning of the optical and electronic properties of semiconductor nanowires can be achieved by crystal phase engineering. Zinc-blende and diamond semiconductors exhibit pressure-induced structural transitions as well as a strong pressure dependence of t ...

American Chemical Society2012

Momentum dependence of the excitons in pentacene

Helmuth Berger

We have carried out electron energy-loss investigations of the lowest singlet excitons in pentacene at 20 K. Our studies allow to determine the full exciton band structure in the a*, b* reciprocal lattice plane. The lowest singlet exciton can move coherent ...

2012

Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures

Anna Fontcuberta i Morral, Martin Heiss, Sonia Conesa Boj, Emanuele Uccelli, Efthimios Kaxiras, Jun Ren

A method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires presenting zinc-blende/wurtzite polytypism are investigated by photoluminesc ...

2011

Untangling the Electronic Band Structure of Wurtzite GaAs Nanowires by Resonant Raman Spectroscopy

Anna Fontcuberta i Morral, Martin Heiss, Emanuele Uccelli, Bernt Ketterer

In semiconductor nanowires, the coexistence of wurtzite and zinc-blende phases enables the engineering of the electronic structure within a single material. This presupposes an exact knowledge of the band structure in the wurtzite phase. We demonstrate tha ...

American Chemical Society2011

Raman Spectroscopy of GaAs Nanowires

Bernt Ketterer

Semiconductor nanowires offer a wide range of opportunities for newgenerations of nanoscale electronic and optic devices. For these applications to become reality, deeper understanding of the fundamental properties of the nanowires is required. In this the ...

EPFL2011

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