Evaluation of silicon tuning-fork resonators under space-relevant radiation conditions
Publications associées (38)
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
Aluminum nitride thin films have been grown by reactive magnetron sputter technique using a pulsed power supply. The highly (002)-textured columnar films deposited on platinized silicon substrates exhibited quasi-single-crystal piezoelectric properties. Th ...
Three different kinds of two-port flexural resonators, with both clamped and free ends, and with nominal resonance frequencies between 5 MHz and 50 MHz, were designed and fabricated. Among them, a novel free-free third-mode resonator, as well as a tunable ...
The fabrication, design, and characterization of high-quality factor microelectromechartical (MEM) resonators fabricated on thin-film silicon-on-insulators (SOIs) are addressed in this paper. In particular, we investigate laterally vibrating bulk-mode reso ...
Institute of Electrical and Electronics Engineers2009
The goal of the project is to fabricate ultra sensitive cantilevers for magnetic resonance force microscopy. Such devices have been produced using SOI wafers and a novel fabrication process combining Al encapsulation and HF-vapor release. The realized cant ...
High-Q, bulk acoustic wave composite resonators based on a symmetric layer sequence Of SiO2-A1N-SiO2 sandwiched between electrodes have been developed. Acoustic isolation was achieved by means of deep silicon etching to obtain membrane type TFBAR's. Three ...
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2007
In this paper, an improved design of a silicon micromachined gyroscope (angular rate sensor) is presented. It is based on the tuning fork principle and realized by combining two proof masses. The gyroscope is driven by electromagnetic forces and detects th ...
A novel concept for shear mode Bulk Acoustic Resonators (BAR) is presented. It is based on c-axis oriented AlN thin films grown on silicon dioxide thin films, combined with interdigitated electrodes. Such a structure leads to an excitation of mainly shear ...
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2008
High-Q silicon membranes have been fabricated as resonator elements for excitation by magnetic direct generation of acoustic waves. Operating in the thickness shear mode, these inexpensive sensor elements are remotely excited by a planar spiral coil, drive ...