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In this work, the conformal mapping technique is applied to obtain an analytical closed form solution of the 2D Poisson’s equation for a double-gate Tunnel FET. The generated band profiles are accurate in all regions of device operation. Furthermore, the current levels are estimated by implementing the non-local band-to-band tunneling model from Synopsys Sentaurus TCAD. A good agreement with simulations for varying device parameters is demonstrated and the advantages and limitations of the new modeling approach are investigated and discussed.
Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Teodor Rosca, Matteo Cavalieri
Mihai Adrian Ionescu, Kirsten Emilie Moselund, Clarissa Convertino
Elison de Nazareth Matioli, Pirouz Sohi, Jun Ma, Luca Nela, Catherine Erine, Minghua Zhu