An ultra-low temperature scanning Hall probe microscope for magnetic imaging below 40 mK
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The general idea of Nanotechnology is not new – it has been studied since Nobel laureate Richard Feynman outlined the idea in a speech in 1959 – but it's only recently that the progress carried out in the various fields of material, optic, physic and engin ...
A large number of characterization tools for semiconductor based heterostructures are available nowadays. Most of these techniques deliver high temporal resolution (down to hundreds of femtoseconds) or good spatial resolution (down to sub nanometer resolut ...
Anewmicrosystem with the ability to detect magnetic microstructures based on the non-invasive Hall principle is presented. The micro-Hall plate embedded in the microsystem and scaled down to the physical limits of the employedCMOStechnology has an active a ...
This paper describes the characterization and application of electrically insulated conductive tips mounted on a cantilever for use in an atomic force microscope and operated in liquid. These multifunctional probes were microfabricated and designed for mea ...
Conventional Hall devices are widely employed to measure magnetic fields produced by millimetre sized (or larger) current-caring conductors or permanent magnets with a standard active area of about (100 um)^2. Micro-Hall sensors have recently emerged as a ...
We present an automation technique for the growth of electron beam deposited tips on whole wafers of atomic force microscope cantilevers. This technique uses pattern recognition on scanning electron microscope images of successive magnifications to precise ...
Al0.1Ga0.9N(5nm)/GaN(2nm) and In0.2Ga0.8N/GaN quantum wells (QWs) grown on GaN/sapphire have been studied by cathodoluminescence (CL) spectroscopy and imaged using an experimental setup especially developed for scanning near-field CL microscopy, which comb ...
We report on the epitaxial growth of high quality GaN films on Si(111) substrates by molecular beam epitaxy using ammonia. The surface morphology and crystallinity of thick undoped GaN films are characterized by reflection high-energy electron diffraction ...
A simple method has been developed for the prodn. of Au surfaces which are uniformly flat over large areas. Si wafers serve as substrates for the evapn. of thin Au layers. A glass slide glued onto the Au film allows successful sepn. of the Au layer from th ...
We report on microscopic photoluminescence and photoluminescence excitation of thin Al0.3Ga0.7As/GaAs quantum wells grown on exactly oriented (001) GaAs substrates. The experiments are done at low temperature by selectively exciting a few mu m(2) of the sa ...