Structure and electronic properties of AlCrOxN1-x thin films deposited by reactive magnetron sputtering
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This work consists in an experimental study of the main parameters governing the transport of heat across an interface between two solids, when it is dominated by phonons. The main experimental tool used is Time-Domain ThermoReflectance (TDTR), which is an ...
Silicon nitride based ceramics (SiAlONs); tetragonal polycrystalline zirconia (3Y‐TZP); alumina and their composites reinforced with different amount of multi‐ walled carbon‐nanotubes (CNTs) have been processed by Spark Plasma Sintering (SPS). High tempera ...
Miniaturized, low temperature Solid Oxide Fuel Cells (SOFCs) that operate below 600 °C are promising for supplying electrical power to portable devices. Thin electrolyte membranes of less than one micrometer thickness have been shown to yield reasonable po ...
Nowadays thin films play an important role in everyday life and in industries. Thin film technology has been developed primarily for the growing demand for development of smaller and smaller devices that require advanced materials and new processing techni ...
EPFL2011
Oxynitride thin films, a novel class of mixed anionic solid structures, have gained an intense interest during recent years related to the unique interplay of oxygen (O) and nitrogen (N) with metals in the material structure. This matter can result in spec ...
EPFL2012
This work presents the Continuous Wave (CW) laser crystallization of thin amorphous silicon (a-Si) films deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) and by Electron Beam Evaporation (EBE) on low cost glass substrate. The films are charac ...
2012
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Al95.5Cr2.5Si2(N1-xOx) thin films were prepared using pulsed DC-magnetron sputtering at 650 degrees C by changing the oxygen to nitrogen ratio (O-2/(O-2 + N-2)) in the reactive gas. The obtained films were characterized by various techniques including XRD, ...
2011
Multi-element oxynitrides of type Al-Cr-Si-O-N were prepared using r.f. magnetron sputtering from Al80Cr2.5Si17.5 (at.%) target composition and O-2/(O-2+N-2) gas flow ratio between 0 and 100%. Two series of samples varying from pure nitrides to pure oxides ...
A series of TaOxNy photoelectrodes were deposited on F:SnO2 (FTO) substrates by DC reactive sputtering at room temperature, under a mixture of Ar, N-2 and O-2. The effects of the O-2 partial pressure during deposition (Po-2) on the films crystallinity, the ...
The influence of oxygen content on the properties of cathodic arc-deposited AlCr(OxN1-x) coatings has been studied. All samples were prepared in a nitrogen-rich mixture of N-2 and O-2 at 550 degrees C using lateral rotating arc cathodes (LARC) technology t ...