Analytical method for determining quantum well exciton properties in a magnetic field
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A reordered valence band in GaN/AlxGa1-xN quantum wells with respect to GaN epilayers has been found as a result of the observation of an enhanced g factor (g*similar to3) in magnetoluminescence spectra in fields up to 55 T. This has been caused by a rever ...
Exciton reflectivity from GaN/AlxGa1-xN quantum wells (QWs) shows broad peaks that are difficult to analyze within a conventional single-free-exciton model. We have applied a new formalism that allows us to separate numerically radiative and inhomogeneous ...
Photoluminescence excitation (PLE) spectroscopy was carried out to investigate the excitation/emission cycle of MBE grown InGaN quantum structures. Quantum well and Stranski-Krastanov type quantum box samples were chosen that emit from blue to red. The ban ...
In the present work, we theoretically investigate the intersubband relaxation of electrons in quantum well systems during photoexcitation using an ensemble Monte Carlo approach. In particular, we compare with recent experimental results by Hartig et al. (P ...
Influence of hydrostatic pressure on the light emission from strained GaN/AlGaN multi-quantum-well systems has been studied, Pressure coefficients of the photoluminescence peak energies show a strong reduction with respect to that of the GaN energy ? ap an ...
Time-resolved up-conversion measurements of secondary emission from multiple quantum wells under resonant femtosecond excitation are reported for GaAs multiple quantum wells with qualitatively different interface disorder. The transient resonant Rayleigh s ...
We derive the effective Bose Hamiltonian for a system of interacting excitons applying the Usui transformation. The fermionic nonlinearities are consistently included, leading to a density dependent correction to the kinetic Hamiltonian and to a saturation ...
We report on efficient, narrow linewidth exciton recombination in GaAs/AlGaAs V-groove quantum wire light-emitting diodes at room temperature. The high efficiency is due to a selective carrier injection mechanism resulting in an estimated internal quantum ...
We report on time-resolved photoluminescence studies of charged and neutral excitons in a modulation doped GaAs quantum well under resonant excitation and high magnetic field. The radiative lifetime of the charged exciton is rather short, 60 ps at zero hel ...
We have studied the influence of hydrostatic pressure on the light emission from a strained GaN/AlGaN multiquantum well system. We have found that the pressure coefficients of the photoluminescence peak energies are dramatically reduced with respect to tha ...
