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Wafer-Level Hysteresis-Free Resonant Carbon Nanotube Transistors

Publications associées (40)

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Encapsulated Low Frequency Vibrating Body Field Effect Resonator

Marion Hermersdorf

Resonators for time and frequency reference applications are essential elements found in most electronic devices surrounding us. The continuous minimization and ubiquitous distribution of such electronic devices and circuits demands for resonators of small ...

EPFL2013

FinFET integrated low-power circuits for enhanced sensing applications

Mihai Adrian Ionescu, Antonios Bazigos, Alexandru Rusu, Sara Rigante, Paolo Livi

This work presents different circuit architectures that combine sensing and signal readout functions. The basic building block is a Fin Field-Effect Transistor (Fin-FET) used as both sensor and metal gate transistor. Moreover, a hybrid partially gated FinF ...

Elsevier2013

Ferroelectric tunnel fet switch and memory

Mihai Adrian Ionescu

A Ferroelectric tunnel FET switch as ultra-steep (abrupt) switch with subthreshold swing better than the MOSFET limit of 60 mV/decade at room temperature combining two key principles: ferroelectric gate stack and band-to-band tunneling in gated p-i-n junct ...

2013

Multi-gate Si nanowire MOSFETs

Mohammad Najmzadeh

Multi-gate devices e.g. gate-all-around (GAA) Si nanowires and FinFETs are promising can- didates for aggressive CMOS downscaling. Optimum subthreshold slope, immunity against short channel effect and optimized power consumption are the major benefits of s ...

EPFL2012

From All-Si Nanowire TFETs Towards III-V TFETs

Hesham Ghoneim

Performance improvement by device scaling has been the prevailing method in the semiconductor industry over the past four decades. However, current silicon transistor technology is approaching a fundamental limit where scaling does not improve device perfo ...

EPFL2012

Vertically-stacked gate-all-around polysilicon nanowire FETs with sub-μm gates patterned by nanostencil lithography

Giovanni De Micheli, Jürgen Brugger, Andreea Veronica Savu, Davide Sacchetto, Michail Zervas, Shenqi Xie, Yusuf Leblebici

We report on the top-down fabrication of vertically-stacked polysilicon nanowire (NW) gate-all-around (GAA) field-effect-transistors (FET) by means of Inductively Coupled Plasma (ICP) etching and nanostencil lithography. The nanostencil is used to form sub ...

Elsevier2012

Self-Assembled Liquid-Gated Zinc Oxide Nanowire Transistors

Vivek Pachauri

This thesis aims at the site-specific realization of self-assembled field-effect transistors (FETs) based on semiconducting Zinc oxide NWs and their application towards chemical and bio-sensing in liquid medium. At first, a solution based growth method for ...

EPFL2011

Field-Effect Transistors Based on ZnO Nanowires

Daniel Dominik Kälblein

Semiconductor nanowires are an emerging class of materials with great potential for applications in future electronic devices. The small footprint and the large charge-carrier mobilities of nanowires make them potentially useful for applications with high- ...

EPFL2011

In-IC Strategies for 3D Devices in Bulk Silicon

Matthieu Bopp

The increase of components density in advanced microelectronics is practically dictated by the device size and the achievable pitch between the devices. Scaling down dimensions of devices and progress in the circuit design allowed following Moore's law dur ...

EPFL2011

SWNT array resonant gate MOS transistor

Mihai Adrian Ionescu, Anupama Arun

We show that thin horizontal arrays of single wall carbon nanotubes (SWNTs) suspended above the channel of silicon MOSFETs can be used as vibrating gate electrodes. This new class of nano-electromechanical system (NEMS) combines the unique mechanical and e ...

2011