Enhanced sensitivity due to current redistribution in the Hall effect of semiconductor-metal hybrid structures
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The first commercially available teslameter with a fully integrated 3-axis Hall probe is described. The Hall probe chip contains horizontal and vertical Hall elements, analogue electronics, and a synchronisation circuit. A horizontal Hall element measures ...
Institute of Electrical and Electronics Engineers2006
The paper deals with Hall and flux-gate magnetic field sensors consisting of integrated combination of CMOS ASICs and planar ferromagnetic components. Ferromagnetic parts are made of a soft amorphous alloy, integrated at the CMOS wafer in a post-processing ...
The first commercially available teslameter with a fully integrated 3-axis Hall probe is described. The Hall probe chip contains horizontal and vertical Hall elements, analogue electronics, and a synchronisation circuit. A horizontal Hall element measures ...
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Recently, it was shown that semiconductor-metal hybrid structures can exhibit a very large magnetoresistance effect, the so-called extraordinary magnetoresistance (EMR) effect. This led to the perspective of using EMR devices in magnetic-field sensors and ...
We report on magnetotransport experiments performed at 4.2 K on hybrid structures consisting of a metal and a mesoscopic two-dimensional electron system in an InAs/InGaAs heterostructure. The devices were fabricated using cleaved-edge overgrowth. We find t ...
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