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In this paper, we present a detailed investigation of the impact of fin width (w(fin)) on tri-gate AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs). As w(fin) is reduced, the threshold voltage (V-TH) increases, which is due ...
Spin-spin correlations can be the driving force that favours certain ground states and are key in numerous models that describe the behaviour of strongly correlated materials. While the sum of collective correlations usually lead to a macroscopically measu ...
Nonlinear photoluminescence (N-PL) is a broadband photon emission arising from a nonequilibrium heated electron distribution generated at the surface of metallic nanostructures by ultrafast pulsed laser illumination. N-PL is sensitive to surface morphology ...
Hv1s are ubiquitous highly selective voltage-gated proton channels involved in male fertility, immunology, and the invasiveness of certain forms of breast cancer. The mechanism of proton extrusion in Hv1 is not yet understood, while it constitutes the firs ...
The brain is a complex biological system composed of a multitude of microscopic processes, which together give rise to computational abilities observed in everyday behavior. Neuronal modeling, consisting of models of single neurons and neuronal networks at ...
The digitalization of our world is proceeding with every new technical product placed on the market. By making them smarter, e.g. linking them together and equipping them with sensors, a vast mass of data is collected. Processing and storing this informati ...
Strain is inevitable in two-dimensional (2D) materials, regardless of whether the film is suspended or supported. However, the direct measurement of strain response at the atomic scale is challenging due to the difficulties of maintaining both flexibility ...
With the advent of spintronics, significant research effort is made to realize efficient injection, transport, manipulation, and detection of spin. The material platforms and device architectures suitable for this purpose 3D topological insulators (TIs) ar ...
Method for making nanopores in thin layers or monolayers of transition metal dichalcogenides comprising the steps of provinding a suspended transistion metal dichalcogenide layer (1) in an electrolyte (2), applying a transmembrane voltage (V) high enough t ...
Monolayer transition metal dichalcogenides (TMD) such as molybdenum disulfide (MoS2), tungsten diselenide (WSe2) and tungsten disulfide (WS2), have shown in the last years remarkable physical properties. These direct badgap three-atoms thick monolayers, wi ...
