Tunable Resonant Cavity Enhanced Detectors using Vertical MEMS Mirrors
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The growth of GaN and InxGa1-xN on c-plane sapphire substrates was carried out by molecular beam epitaxy using NH3. bl situ reflection high-energy electron diffraction (RHEED) was used to monitor the growth process. Oscillations of the specular beam intens ...
Using in situ hydrogen desorption before the growth of the 12nm thick active InGaAs layer over V-grooves, operation of gain coupled DFB lasers at 989nm is achieved al room temperature. As-cleaved lasers, 600 mu m long, have threshold current densities as l ...
Chemical beam epitaxy (CBE) grown InAsP/InGaAsP edge-emitting laser diodes on GaAs substrates obtained by localised fusion in a nitrogen environment exhibit high quality fused interfaces. A degradation of fused lasers is observed which is attributed to the ...
High quality InP/InGaAsP Distributed Bragg Reflectors (DBRs) are a key element in Vertical Cavity Surface Emitting Laser (VCSELs) for long wavelength (1.55 mu m) applications [1-3]. Because of the small index difference between InP and InGaAsP, more than 3 ...
The purpose of this work is to compare for thin film analysis, atomic force microscopy, a recently emerging tool, with well-established nuclear analysis techniques. The comparison is conducted using typical samples of InAs/GaAs heterostructures grown by mo ...
This thesis deals with the monolithic integration of long wavelength (1.3-1.55 µm) p-i-n photodiodes with HEMT field effect transistors for the realization of wide bandwidth OEIC receivers for lightwave communication systems. Part of this work was carried ...
In this paper, the RBS phenomenon is described and experimental results concerning Bragg reflectors and microcavities grown on silicon substrates by molecular beam epitaxy are presented. This spectroscopy is not sensitive to (i) the lateral fluctuation of ...
Photoluminescence intensity and emission wavelength of InAsP/InGaAsP and InGaAs/InGaAsP multi-quantum well (MQW) laser structures grown by chemical beam epitaxy (CBE) at 460 degrees C and V/III ratio of 2 are considerably affected by annealing at temperatu ...