Molecular-beam epitaxial growth and characterization of modulation-doped field-effect transistor heterostructures using InAs/GaAs superlattice channels
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The influence of indium surface segregation, As-P exchange at the interfaces and residual incorporation of As and P on the photoluminescence properties of GaAs/GaInP quantum wells, is investigated both theoretically and experimentally. It is shown that the ...
We study the dynamics of the charged and neutral excitons in a modulation-doped GaAs quantum well by time-resolved photoluminescence under a resonant excitation. The radiative lifetime of the charged exciton is found to be surprisingly short, 60 ps. This t ...
Cyclotron resonance and photoluminescence measurements have been performed on two types of modulation-doped field-effect transistor heterostructures having their bidimensional channel based, respectively, on an InxGa1-xAs quantum well and an InAs-GaAs shor ...
We report on time-resolved photoluminescence studies of charged and neutral excitons in a modulation doped GaAs quantum well under resonant excitation and high magnetic field. The radiative lifetime of the charged exciton is rather short, 60 ps at zero hel ...
We report on the investigation of In surface segregation in GaInP/GaAs and GaInAs/GaAs heterostructures grown by chemical beam epitaxy (CBE). Owing to the peculiarities of CBE growth, it is shown that In segregation can be quantitatively evaluated in real- ...
In this study we used transmission electron microscopy (TEM) to assess the origin of the electrical behaviour of two dimensional electron gas (2DEG) in high electron mobility transistors (HEMTs) based upon InAlAs/InGaAs heterostructures grown on InP substr ...
Our investigations focus on low-temperature luminescence experiments on a set of type-II GaAs/AlAs multiple-quantum-well (MQW) samples grown by low-pressure metal-organic vapor-phase epitaxy. The layered structures consists of 50 periods of either 2 monola ...
In this work, we present a correlation between the morphological characterization of InyAl1−yAs/InxGa1−xAsheterostructures grown on InP substrates for high electron mobility transistors(HEMTs) applications as determined by transmission electron microscopy, ...
Thermally detected optical absorption measurements have been performed at liquid helium temperature in order to study the effects of In segregation on the optical properties of InxGa1-xAs/GaAs quantum wells grown by molecular-beam epitaxy under various gro ...
Chemical beam epitaxy (CBE) grown InAsP/InGaAsP edge-emitting laser diodes on GaAs substrates obtained by localised fusion in a nitrogen environment exhibit high quality fused interfaces. A degradation of fused lasers is observed which is attributed to the ...
