Electrical characterization of pseudomorphic GaAs/InGaAs/AlGaAs and AlGaAs/InGaAs/AlGaAs modulation doped field effect transistor-type heterostructures grown by molecular-beam epitaxy
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Low-frequency noise measurements have been performed in the linear range of the I-V characteristics of pseudomorphic Al0.3Ga0.7As/In0.25Ga0.75As/GaAs high electron mobility transistors (HEMTs) grown by molecular beam epitaxy with different channel thicknes ...
This thesis deals with the monolithic integration of long wavelength (1.3-1.55 µm) p-i-n photodiodes with HEMT field effect transistors for the realization of wide bandwidth OEIC receivers for lightwave communication systems. Part of this work was carried ...
We report the fabrication and characterization of lateral metal-semiconductor-metal (MSM) photodiodes on an InP substrate. The photoabsorbing layer is made of InGaAs covered by a thin InP Schottky barrier enhancement layer. Schottky contacts for the detect ...
Cyclotron resonance and photoluminescence measurements were carried out on two types of modulation-doped field-effect transistor heterostructures whose channels were made of an InAs-GaAs short-period superlattice and of an InxGa1-xAs quantum well, respecti ...
High strained InxGa1-xAs/GaAs quantum well (QW) structures have been grown by metalorganic molecular beam epitaxy (MOMBE) with the aim of investigating the capability of this epitaxial growth method in terms of thickness control. Emission lines from QWs wi ...
Growth temperatures between 450 and 520 degrees C and V/III ratios of 2-8 were explored to optimize the crystalline quality and the transport properties of compressively strained InxGa1-xAs/InP heterostructures (0.53 < x < 1). 77 K Hall mobilities as high ...
Modulation doped GaAs/In0·25Ga0·75As/Al0·3Ga0·7As high electron mobility transistor structures were grown using different molecular beam epitaxy growth temperatures and In0·25Ga0·75 As channel thicknesses. Drain current deep level transient spectroscopy (D ...
We present the photo-Hall electrical properties of MBE-grown modulation-doped field-effect transistors (MODFET) structures using the so-called short-period superlattices (SPS) channel of InAs and GaAs instead of the standard InGaAs alloy channel. Photo-Hal ...
In this review we first present the two classes of non-reactive and reactive surfactants effective during homoepitaxy and heteroepitaxy, respectively. We then describe and analyse the results obtained by ''true'' surfactant-mediated molecular-beam epitaxy ...
In this work, we present the Hall electrical properties for molecular beam epitaxy,grown modulation-doped field-effect transistors structures using a short-period superlattices channel of (InAs)(1.1+/-0.1) (GaAs)(n) where the indexes 1.1 and n represent th ...