Quantum dots in the GaAs/AlxGa1-xAs core-shell nanowires: Statistical occurrence as a function of the shell thickness

Sonia Conesa Boj, Léo Duchêne, Yannik Fontana, Anna Fontcuberta i Morral, Luca Francaviglia, Federico Matteini
American Institute of Physics, 2015
Article

Résumé

Quantum dots (QDs) embedded in nanowires represent one of the most promising technologies for applications in quantum photonics. Self-assembled bottom-up fabrication is attractive to overcome the technological challenges involved in a top-down approach, but it needs post-growth investigations in order to understand the self-organization process. We investigate the QD formation by selfsegregation in AlxGa1-xAs shells as a function of thickness and cross-section morphology. By analysing light emission from several hundreds of emitters, we find that there is a certain thickness threshold for the observation of the QDs. The threshold becomes smaller if a thin AlAs layer is pre-deposited between the GaAs nanowire core and the AlxGa1-xAs shell. Our results evidence the development of the quantum emitters during the shell growth and provide more guidance for their use in quantum photonics. (C) 2015 AIP Publishing LLC.

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Quantum dots embedded within nanowires represent one of the most promising technologies for applications in quantum photonics. Whereas the top-down fabrication of such structures remains a technological challenge, their bottom-up fabrication through self-assembly is a potentially more powerful strategy. However, present approaches often yield quantum dots with large optical linewidths, making reproducibility of their physical properties difficult. We present a versatile quantum-dot-innanowire system that reproducibly self-assembles in core-shell GaAs/AlGaAs nanowires. The quantum dots form at the apex of a GaAs/AlGaAs interface, are highly stable, and can be positioned with nanometre precision relative to the nanowire centre. Unusually, their emission is blue-shifted relative to the lowest energy continuum states of the GaAs core. Large-scale electronic structure calculations show that the origin of the optical transitions lies in quantum confinement due to Al-rich barriers. By emitting in the red and self-assembling on silicon substrates, these quantum dots could therefore become building blocks for solid-state lighting devices and third-generation solar cells.

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We report a study of the quantum dot (QD) emission in short photonic crystal waveguides. We observe that the quantum dot photoluminescence intensity and decay rate are strongly enhanced when the emission energy is in resonance with Fabry-Perot (FP) cavity modes in the slow-light regime of the dispersion curve. The experimental results are in agreement with previous theoretical predictions and are further supported by three-dimensional finite element simulations. Our results show that the combination of slow group velocity and Fabry-Perot cavity resonance provide an avenue to efficiently channel photons from quantum dots into waveguides for integrated quantum photonic applications. (C) 2012 American Institute of Physics. [doi:10.1063/1.3683541]

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