Density functional theory study on surface reaction mechanism of atomic layer deposition of ZrO(2)on Si(100)-2 x 1
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The solvent-free selective hydrogenation of 2-methyl-3-butyn-2-ol (MBY) to 2-methyl-3-buten-2-ol (MBE) was studied over a Pd/ZnO structured catalyst and compared to its behavior in water-assisted conditions. The catalytic behavior was correlated with the s ...
The possibility to increase the performance (productivity or selectivity) of a chemical reactor by using periodic variations of reaction parameters (e.g. reactant concentration or temperature) has been theoretically envisaged since the beginning of the 70t ...
Nitrous oxide is the third most important gas contributing to global warming and its concentration in the atmosphere is still on the rise. Nitric acid production represents the largest source of N2O in the chemical industry, with a total annual emission of ...
Initial surface reaction mechanism for atomic layer deposition of HfO2 on the hydroxylated GaAs(001)-4x2 surface using HfCl4 and H2O as precursors is investigated using hybrid density functional theory. The reaction between HfCl4 and H2O with the hydroxyla ...
Density functional theory is employed to investigate atomic layer deposition mechanism of HfO2, on Ge(I 0 0)-2 x I surface. Both the HfCl4 and H2O half-reactions proceed through an analogous trapping-mediated mechanism. The neighboring hydroxyl in the reac ...
Cluster calculations employing hybrid density functional theory have been carried out to examine the initial surface reactions in atomic layer deposition (ALD) of TiN thin films on the SiO2 surface using TiCl4 and NH3 as precursors. The potential energy su ...
A general method for the direct evaluation of the temperature dependence of the quantum-mechanical reaction rate constant in many-dimensional systems is described. The method is based on the quantum instanton approximation for the rate constant, thermodyna ...
Oxygen vacancy migration is studied in monoclinic HfO2 and across its interface with SiO2 through density functional calculations. In HfO2, long-range diffusion shows activation barriers of 2.4 and 0.7 eV for the neutral and doubly positively charged vacan ...
We have calculated the atomistic mechanism for the HfO2 atomic layer deposition (ALD) using Hf(NEtMe)(4) and H2O precursors using density functional theory. On hydroxylated Si surface, our results show overall Hf(NEtMe)(4) half-reaction is exothermic by 1. ...
In this work, I present the results of my studies on the state-resolved reactivity of silane (SiH4) on the Si(100)-(2x1) surface. The results demonstrate a co-existence of both a direct and a precursor mediated mechanisms for the dissociative chemisorption ...