GaAs nanowires: from doping to plasmonic hybrid devices

Semiconductor nanowires (NWs) are filamentary crystals with the diameter ranging from few tens up to few hundreds of nanometers. In the last 20 years, they have been intensively studied for the prospects that their unique quasi-one dimensional shape offers to both fundamental and applied science. More recently particular attention has been dedicated to use NWs as building blocks for nano-electronic devices. In this thesis we investigate the electro-optical properties of NWs in order to put some light on the mechanisms governing the electrical transport and the light coupling between NWs and metal nanostructures. We investigate Be and C doping in GaAs NWs synthesized by Molecular Beam Epitaxy (MBE). We obtain a doping control over a large range of densities and we identify a new in situ incorporation path. Since strong surface impurity scattering in III-V materials degrade the electronic performances, we grew NWs passivated with an AlGaAs layer and we investigate their properties. The NW passivation allows for the increase of the electron mean free path by a factor of almost 10. In addition, we designed AlGaAs/GaAs modulation doping NWs. The modulation doping structure allows for the to enhancement of the NW electron mobility revealing excellent properties for the realization of nano-electronic devices. We calculate the electron distribution in the modulation doped NWs and we observe a six-fold symmetry with six 1D electron channels when the carrier concentration is high, while for low concentrations, electrons are delocalized in the GaAs NW core. Thanks to their special interaction with light, semiconductor NWs have opened new avenues in photonics, quantum optics and solar energy harvesting. Here, we design a new system composed of a NW and an array of nanoantennas. Initially, we successfully demonstrated the plasmonic coupling between NWs and nanoantennas, observing an electric field enhancement in the NW as a function of the nanoantenna's gap distance. This finding represented an initial step toward the development of coupled nano-structures for the realization of a new generation of solar cells, detectors and non linear optical devices. Near field coupling was also used between a NW and Yagi-Uda antennas to obtain directional emission. In particular the precise tuning of the Yagi-Uda dimensions and positions leads a strong variation of the NW emission, being able to change this from backward to forward. One of the major challenges for NWs full technological deployment has been their strong polarization dependence in light absorption and emission. Here, we demonstrate that a hybrid structure formed by GaAs NWs with a highly dense array of bow-tie antennas is able to modify the polarization response of a NW. As a result, the increase in light absorption for transverse polarized light changes the NW polarization response, including the inversion of the polarization response. We calculated that the absorption of transverse polarized light can be enhanced up to 15 times. We also fabricate several electrical devices proving our calculated predictions.

Polarization response of nanowires a la carte

Esther Alarcon Llado, Francesca Amaduzzi, Alberto Casadei, Anna Fontcuberta i Morral, Martin Heiss, Eleonora Russo

Thanks to their special interaction with light, semiconductor nanowires have opened new avenues in photonics, quantum optics and solar energy harvesting. One of the major challenges for their full technological deployment has been their strong polarization dependence in light absorption and emission. In the past, metal nanostructures have been shown to have the ability to modify and enhance the light response of nanoscale objects. Here we demonstrate that a hybrid structure formed by GaAs nanowires with a highly dense array of bow-tie antennas is able to modify the polarization response of a nanowire. As a result, the increase in light absorption for transverse polarized light changes the nanowire polarization response, including the polarization response inversion. This work will open a new path towards the widespread implementation of nanowires applications such as in photodetection, solar energy harvesting and light emission.

Nature Publishing Group2015

Realization and study of InAs/GaAs quantum dot superluminescent diodes emitting at 1.3µm

Marco Rossetti

A quantum dot is a semiconductor nanostructure that confines the motion of conduction band electrons and valence band holes in all three spatial directions, thus creating fully discrete energy levels. The confinement in the InAs/GaAs material system is generated by the bandgap difference for the two materials (∼ 0.4 eV for InAs, and ∼ 1.4 eV for GaAs) which provides a minimum of potential energy for both electrons and holes inside the InAs nanoparticle. The appearance of new nanoscale effects modifies the electro-optical properties of such a system which makes possible the improvement of existing device performance or even fascinating novel device applications. For the creation of coherent structures with very high purity and high density, as it is required for application in light emitting devices, self-assembling is a very important pathway. The quantum dot creation mostly relies on the relaxation of the strain accumulated during the growth of lattice mismatched materials, which happens in a non-equlibrium condition. This results in a statistical distribution of all the parameters characterizing the InAs nanocrystals as size, composition and strain, whose direct manifestation is the inhomogeneously broadened light emission deriving from quantum dot ensembles. At the dawning of the quantum dot development the broadening was considered as a limiting factor for application in semiconductor lasers. Today, it is considered favorably for all the applications where a broad gain spectrum is required as optical amplifiers, monolithic and external-cavity tunable lasers, and superluminescent diodes. The objective of this thesis is the application of InAs/GaAs self-assembled quantum dots to the active region of high power and broad-band superluminescent diodes emitting in the 1.3 μm wavelength region. Superluminescent diodes are edge-emitting semiconductor light sources based on the amplification of spontaneous emission along a waveguide where optical gain is achieved through current injection. They combine the high power and brightness of laser diodes with the low coherence of LEDs. The latter is a fundamental feature for the application in optical coherence tomography medical imaging, where the image resolution is related to the spectral bandwidth of the light source used. The achievement of bandwidths larger than 100 nm are demonstrated in this work through the optimization of molecular beam epitaxy growth conditions. This may be done optimizing the statistical size-dispersion of the dot ensemble, or through the use of different dot layers emitting at slightly different wavelengths. The large bandwidth emission is obtained also due to the peculiar energy structure of this material, for which a multi-state emission appears under particular injection conditions. As a term of comparison, best commercial single-chip superluminescent diodes for the imaging application at 1.3 μm show bandwidths around 60 nm. Moreover, the discrete nature of the energy levels in InAs quantum dots together with the implementation of a GaAs-based technology can be beneficial for the device temperature stability (the competing technology, based on InP, suffers from strong thermal degradation). The analysis and understanding of the device temperature characteristics will be detailed in the last chapter of the manuscript. Even though standard devices show an important temperature dependence, a better stability may be achieved through the use of p-doped active regions. In the last few years quantum dot devices have shown outstanding properties if compared to the competing quantum well technology. Low threshold currents, high temperature stability and low chirp in lasers, large bandwidths and low gain saturation in amplifiers have been demonstrated. However, in spite of the large interest among the scientific community, many of the microscopic processes at the origin of the electro-optical characteristics of this material are not completely understood yet. The physics of the quantum dot active material, will be modeled in this work through the use of systems of rate equations with different complexity depending on the system they are applied to. We will provide a mean-field rate equation model allowing to get insights about carrier dynamics in QD lasers. Also, we will develop two different traveling-wave rate equation models, one for the modeling of the L-I characteristics and the other for the modeling of the spectral characteristics of quantum dot superluminescent diodes. Considering the carrier and photon density distributions across the device cavity is essential in superluminescent diodes, where the high single pass gain results in large non-homogeneities of photon and carrier distributions. The work is motivated by an industrial cooperation with EXALOS AG, a leading company in the development, manufacturing, and sales of broadband superluminescent diodes.

EPFL2007

Ultra low quantum decoherence nano-optomechanical systems

Mohammadjafar Bereyhi

Thermal motion of a room-temperature mechanical resonator typically dominates the quantum backaction of its position measurement. This is a longstanding barrier for exploring cavity optomechanics at room temperature. In order to enter the quantum regime of the optomechanical interaction, we need to be in the "backaction-dominated" regime, where we can study the limits of quantum measurement and how to circumvent them. To create a system which can enter the quantum regime, the optomechanical transducer has to satisfy certain criteria. A quantum-enabled optomechanical system consists of an optical cavity and a mechanical resonator with ultra low quantum decoherence, which are strongly coupled to each other via the optomechanical interaction.High stress silicon nitride has enabled nanomechanical resonators with exceptionally low dissipation at room temperature via several soft-clamping techniques. Achieving high optomechanical coupling to these coherent nanobeams results in high optomechanical cooperativities, thus alleviating the thermal motion barrier for room temperature quantum optomechanics. Monolithic integration of high-Q nanobeam resonators with optical cavities has been limited to doubly-clamped nanobeams due to the complexity of the device fabrication and long device sizes required for conventional soft-clamping using phononic crystals. In addition, the previous demonstrations of such systems showed limited optomechanical couplings thus a limited single photon cooperativity.I present the design, fabrication and characterization of three different classes of nanomechanical resonators clamp-tapered, fractal-like, and polygon resonators, which support perimeter modes, with Q factors exceeding 3 billion at room temperature and their optical readout using an integrated nearfield nano-optomechanical transducer using high stress silicon nitride. Our transducer features a one-dimensional Fabry-Perot optical cavity integrated with a high-Q nanomechanical resonator. The Fabry-Perot optical cavity is formed by patterning two photonic crystal reflectors on a silicon nitride waveguide designed for high-Q optical modes. Our approach allows individual optimization of optical and mechanical resonators, while maintaining a high optomechanical coupling rate due to large optomechanical mode overlap. Our best performing devices show on-chip optomechanical transducers with single photon cooperativities as high as 123 with mechanical quality factor of 120 million at room temperature. The developed system is of great interest to the optomechanics and sensing community. In quantum optomechanics, it will serve as a platform for quantum feedback control of the nanomechanical resonators to achieve motional ground state of a macroscopic resonator and generation of squeezed light at room temperature. Owing to their record value mechanical quality factors, the room temperature force sensitivity of our highest Q perimeter modes is on par with atomic force microscopy cantilevers at millikelvin temperature.Complete documentation of a nanofabrication process is the key to its reproducibility. Process-specific details of the fabrication techniques are usually missing in journal publications. To bridge this gap, I developed NanoFab-net.org. An online open-access tool that allows sharing process-specific fabrication reports, extracting the metadata and obtaining a unique digital object identifier (DOI) for each report.