Publication
In this work we present an ultra-high-frequency (UHF) single crystal silicon ring resonator with two embedded FETs. Electromechanical coupling is realized through a high-K, namely 10 nm HfO2, dielectric solid-gap sandwiched between the gate electrode and the ring lateral surface. The higher permittivity of the solid-gap material as well as the technological possibility of having narrower gap than air-gap counterparts, will uniquely allow to improve at the same time the electromechanical coupling and the FET amplifcation by increasing the gate capacitance.
Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Teodor Rosca, Sadegh Kamaei Bahmaei, Eamon Patrick O'Connor, Matteo Cavalieri, Carlotta Gastaldi